2024
DOI: 10.1088/1361-6463/ad6275
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Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

Kuiyuan Tian,
Yapeng Zhao,
Jiangfeng Du
et al.

Abstract: To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using t… Show more

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