Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Abstract

ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS-based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS-based materials, but also touches on the future opportunities in this inspiring field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802029. relatively high charge recombination rate and low charge transport process inhibit the optoelectronic properties of ZnS as a high-performance photodetector. As a window layer of optoelectronic devices, a lack of high electrical conductivity typically hinders the practical use of ZnS in solar cells, photodiodes, light-emitting devices, etc. As a photocatalyst, the transparency of ZnS becomes a drawback as it suffers from a poor utilization of sunlight.There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This review summarizes the recent breakthroughs on ZnS-based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices. More importantly, it sheds light on the design principles and fundamental mechanisms of the improved performance of ZnS through strategies such as developing novel nanostructures, bandgap engineering, alloying with other materials, etc. To the best of our knowledge, it is the first comprehensive review on the design principles and material engineering of ZnS for novel/improved properties and intended applications. Briefly, current literature on a variety of ZnS-based structures was first summarized, ranging from 0D to 2D nanostructures. Then, the representative applications of ZnS-based materials are described, which are mainly consisted of four parts, as shown in Figure 1: transparent conductors, UV photodetectors, luminescent devices, and catalysis. Each part contains the latest design strategies of ZnS for the intended applications, fabrication techniques, representative examples, and the state-of-the-art devices. Finally, it outlines the challenges and opportunities in each field. In particular, we provide our perspectives on the future research directions of ZnS in energy and environment.

An In‐Depth Study of Zn Metal Surface Chemistry for Advanced Aqueous Zn‐Ion Batteries

“…It is well known that cubic ZnS has been widely used as a semiconductor due to its wide-bandgap properties. [23] The electrical resistivity (ρ) of the ZnS protective film was also evaluated ( Figure S19, Supporting Information). , in which R is the resistance, I is the applied current, L is the thickness of the ZnS, U is the corresponding voltage, and S is the contact area, ρ was estimated as ≈1.5 × 10 5 Ω cm (σ ≈ 6.5 × 10 −6 S cm −1 ).…”

Comparison of average crystallite size by X-ray peak broadening and Williamson–Hall and size–strain plots for VO2+ doped ZnS/CdS composite nanopowder

“…By the consideration of Gaussian microstrain distribution, RMS used to be derived from the maximum worth of the microstrain become derived from the Bragg's law by Wilson [26,60]. Substituting ε hkl value in the Eq.…”

“…Additionally, to the easier properties, VO 2+ ions doped ZnS/CdS composite nanopowder illustrates reveals further promising functions in the subject of sensors, optoelectronics [23], and ferroelectric memory devices. Doped ZnS/CdS composite nanopowder particles were incorporate with the assistant of remarkable physical and chemical procedure such as spray pyrolysis, RF sputtering, electrochemical deposition, chemical vapor deposition, chemical precipitation and, sol-gel methods [24][25][26][27][28][29][30][31]. Among all these methods, chemical precipitation was more appropriate and suitable procedure due to simplicity, energy-efficient and eco-friendly route to produce VO 2+ ions doped ZnS/CdS composite nanopowder [32].…”

Materials and Designs for Wearable Photodetectors

“…As great progress has been made on the developments of highly intelligent and integrated devices, science and technologies are expected to live in and onto our bodies in different forms of wearables. Drug delivery, health monitors, power supplies, optoelectronic devices, various sensors, are all examples of wearables changing our daily life. Strategies to realize “wearable” have been proposed over the past few years, including electronic skins, textiles, wristbands, helmets, patches, lenses, etc., all fitting well with the body and clothes without interrupting or restricting physical activities of users .…”