A newly proposed design principle states that high transmittance of correlated TCs in the infrared and ultraviolet spectra can arise from correlationmediated intraband absorption between partially occupied transition metal d orbitals and the high transition energy from the O-2p to the d orbitals, respectively. Using this principle, we recently suggested 3d 1 SrVO 3 , 4d 1 SrNbO 3 , and 4d 2 SrMoO 3 perovskites as promising correlated TCs. [16] The electrical properties of correlated TC films can be particularly sensitive to crystallinity. Considering that the spatially directional d orbitals define the conduction band, [17−19] poor crystallinity often leads to dramatically reduced carrier mobility. Therefore, perovskite substrates including (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7 (LSAT) (lattice parameter: 3.88 Å), SrTiO 3 (3.905 Å), and GdScO 3 (3.97 Å in pseudo-cubic notation) have been used to grow single-crystalline SrVO 3 (3.84 Å), SrMoO 3 (3.97 Å), and SrNbO 3 (4.02 Å) films. The similarity in lattice parameters and atomic arrangements of the perovskite substrates have enabled epitaxial growth of correlated perovskite TCs. [3−13,16−19] However, only a few studies have attempted to characterize the transparent conducting properties of correlated perovskite films grown on Al 2 O 3 (a = b = 4.76 Å, c = 12.99 Å, γ = 120°). Importantly, Al 2 O 3 is the most commonly used substrate for optoelectronics. Its large bandgap (≈8.8 eV for corundum Al 2 O 3 ) [20] guarantees higher transmittance (greater than approximately 85% at 200−6000 nm) in a wider spectrum range than the range of SrTiO 3 (approximately 3.2 eV or 75% at 390−5000 nm). Notably, the transparency range of Al 2 O 3 is even wider than 200−2000 nm of silica glass. [21] Al 2 O 3 also has a low price and availability as a large-scale single crystal wafer, which makes it a superior alternative to perovskite substrates. The excellent thermal, chemical, and mechanical stability of Al 2 O 3 is suitable for applications in extreme environments. [22] Therefore, it is highly desirable to characterize the TC performance of correlated perovskite TC films coated on Al 2 O 3 .In this study, we investigated the transparent, conducting, and electromagnetic shielding properties of SrMoO 3 epitaxial films grown on (1102)-oriented Al 2 O 3 . By comparing the properties of SrMoO 3 with the properties of single-crystalline (sc) correlated TC films epitaxially grown on perovskite substrates, we observed that the correlated SrMoO 3 film on a Al 2 O 3 Correlated perovskites have attracted significant attention worldwide for their potential application in transparent conductors. However, most studies in this area have focused on single-crystalline films grown on expensive perovskites. In this study, the transparent conducting properties of SrMoO 3 epitaxial films grown on Al 2 O 3 , the most commonly used substrate for optoelectronics, are investigated. The 45−80-nm-thick SrMoO 3 epitaxial films on ( ( ) ) 1 102 -oriented Al 2 O 3 exhibit low sheet resistance (< 50 Ω □ −1 ) at roo...