A new structure for low‐loss and high‐isolation radio‐frequency microelectromechanical systems (RF MEMS) switches is presented. The high contact force of the switch leads to very small ranges for contact resistance which is the main constrain of DC‐contact RF MEMS switches. The contact resistance of the switch is 27 mΩ leading to negligible thermal noise which is one of the most important parameters for devices operating at RF front‐ends immediately after the antenna where there is not any active stage. The switch is composed of two actuators: an electrothermal actuator for actuation of the switch from OFF to ON state and an electrostatic actuator to hold the switch at ON state. The insertion loss, return loss, and isolation of the switch for frequencies below 70 GHz are −0.35, −20, and −10 dB, respectively. The contact force and contact resistance of the switch are 0.93 mN and 0.027 Ω, respectively. Electrothermal and electrostatic actuators require 0.91 and 50 actuation voltages, respectively. During the ON‐state, the power consumption of the switch is near zero. The low contact resistance and high‐isolation characteristics of the switch make it very suitable for mobile front‐ends.