Design Steps Toward a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%

Rąbkowski, Jacek; Peftitsis, Dimosthenis; Nee, Hans‐Peter

doi:10.1109/tia.2013.2258132

Cited by 42 publications

(23 citation statements)

References 39 publications

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“…In this power los Schottky calculatio conducted phase con S=50 kVA betweenmodule (1 were appli (6) But from the characteristic shown in Fig. 2a and current waveforms in Fig.…”

Section: Circumentioning

confidence: 99%

“…1b). The same can be said about literature examples [3][4][5][6][7][8][9][10][11][12] and an offer of the manufacturers providing integrated power modules [4,10,12,25]. From the point of view of on-state power losses, this case is the may be a serious problem during the design process of threephase converters with new SiC power devices, and especially crucial for converters with conduction losses dominating over the switching losses (i.e.…”

Section: Introductionmentioning

confidence: 98%

“…New diodes and transistors (unipolar JFETs and MOSFETs, as well as bipolar BJTs), available mostly in 1200 V and 1700 V voltage class, can be applied in three-phase converters rated up to several tens of kVAs [2][3][4][5][6][7][8][9][10][11][12]. This field is nowadays dominated by well-established technology of silicon IGBTs, which show different properties in comparison to new SiC power devices.…”

Section: Introductionmentioning

confidence: 99%

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A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Rąbkowski¹,

Płatek²

2016

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse conducting transistor, which results in different distribution of power losses among the devices. Thus, equations describing the conduction power losses of the transistor and diode are improved and verified by means of circuit simulations in Saber. Moreover, a comparison of power losses calculated with the use of standard and new equations is also shown. Total power losses in three SiC MOSFET modules of a 50 kVA converter operating at 20 kHz are up to 30% lower when reverse conduction is taken into account. This shows the importance of the discussed problem and proves that much better accuracy in the estimation of power losses and junction temperatures of SiC devices may be obtained with the proposed approach.

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“…In this power los Schottky calculatio conducted phase con S=50 kVA betweenmodule (1 were appli (6) But from the characteristic shown in Fig. 2a and current waveforms in Fig.…”

Section: Circumentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Rąbkowski¹,

Płatek²

2016

Bulletin of the Polish Academy of Sciences Technical Sciences

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“…According to (5) and (6), the capacitance of X capacitor and Y capacitor is not changed by the carrier frequency. Also, the total capacitance is same regardless of the number of EMC filter stages.…”

Section: Volume Of Emc Filtermentioning

confidence: 99%

Experimental Verification of EMC Filter Used for PWM Inverter with Wide Band-Gap Devices

2015

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This paper discusses the volume of an electromagnetic compatibility (EMC) filter and a cooling system that are used for a pulse width modulation (PWM) inverter with wide band-gap devices. First, the volume of reactors that are used in EMC filters such as common mode choke coils and differential mode choke coils is theoretically estimated. Then, the relationship between the carrier frequency of the PWM inverter and the total volume of filter reactors is clarified via simulation. Moreover, the relationship between the carrier frequency and the volume of the cooling system is calculated on the basis of on experimental results. The total volume of the inverter system that contains the filter reactors and cooling systems is reduced by 54% at a carrier frequency of 300 kHz using a two-stage filter, as compared to the case of a carrier frequency of 150 kHz with a single-stage filter. In addition, an induction motor is driven by a prototype GaN-FET inverter system having a carrier frequency of 300-kHz. As a result, the conducted emission is suppressed below the limit prescribed by CISPR-11 Group 1. Therefore, the proposed design method for EMC filters is validated experimentally. Furthermore, the power loss of the EMC filter is less than 2% as compared with the total loss of the GaN-FET inverter system.

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“…These benefits can be listed as higher efficiency, higher switching frequency, and higher temperature of operation [1]. The benefits of SiC technology have been identified in many applications, such as power factor correction [2], telecom [3], microgrids [4], wind power [5], high-voltage direct current transmission [6], modular multilevel converters [7], [8], inverters [9]- [11], automotive applications [12]- [14], solar power [16], and dc-dc converters [17], [18].…”

mentioning

confidence: 99%

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Colmenares

Sadik

Hilber

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

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Design Steps Toward a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%

Cited by 42 publications

References 39 publications

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Experimental Verification of EMC Filter Used for PWM Inverter with Wide Band-Gap Devices

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

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