Design techniques for EEPROMs embedded in portable systems on chips

Daga, J.M.; Papaix, C.; Merandat, M.; Ricard, Stephane; Medulla, G.; Guichaoua, J.; Auvergne, D.

doi:10.1109/mdt.2003.1173055

Cited by 21 publications

(10 citation statements)

References 11 publications

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“…Several researchers treat the design of conventional SAs using current sensing method [7,9,14]. Figure 2 shows the circuit diagram of the conventional SA.…”

Section: Conventional Samentioning

confidence: 99%

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Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

et al. 2013

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Original scientific paperCurrent or voltage-type sense amplifier (SA) is the key element for sensing process of RFID transponder EEP-ROM. The performance of the EEPROM is influenced by the SA features like memory access time, power dissipation and the reliability. However, larger current or power dissipation put limitations on using current type SA with respect to voltage type SA. A low voltage SA with lower current consumption is presented in this research work, which is compatible with the low power applications like RFID transponder EEPROM. In this research, 0.18µm process is employed to design the low voltage SA with lower power consumption. The simulated results of the output showed that voltage type SA is able to operate under a low power supply voltage (VDD). In addition, only 32 µA current is dissipated by the modified voltage type SA during read period. Moreover, the proposed voltage type SA provides better reliability than the circuits presented in other research papers. Key words: Transponder, EEPROM, RFID, Sense amplifierDizajn i implementacija naponskog mjernog pojačala za RFID transponder s niskim naponom napajanja i malom potrošnjom struje. Strujno ili naponsko mjerno pojačalo (MP) je ključni element očitanja RFID transpondera s EEPROM-om. Na učinak EEPROM-a utječu svojstva pojačala kao što su vrijeme pristupa memoriji, energetski gubici i pouzdanost. Veliki gubici struje i energije ograničavaju mogućnost korištenja strujnog mjernog pojačala u odnosu na naponsko. U ovom radu prikazano je niskonaponsko mjerno pojačalo s malom potrošnjom energije koje je prikladno za korištenje kod RFID transpondera s EEPROM-om. Koristi se proces od 0.18µm za dizajniranje niskonaponskog pojačala male potrošnje. Simulacije izlaznog napona su pokazale da naponsko mjerno pojačalo može raditi s niskim naponom napajanja. Tijekom vremena očitanja na modificiranom naponskom pojačalu troši se samo 32µA struje. Predloženo naponsko mjerno pojačalo ima bolju pouzdanost od onih prikazanih u drugimčlancima.

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“…Several researchers treat the design of conventional SAs using current sensing method [7,9,14]. Figure 2 shows the circuit diagram of the conventional SA.…”

Section: Conventional Samentioning

confidence: 99%

“…The power of the EEPROM SA must be low to increase RFID reading speed [7]. In EEPROM, the read access time is a key factor to determine the read path, which is strongly affected by the SA.…”

Section: Introductionmentioning

confidence: 99%

Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

et al. 2013

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“…The reading and writing power are usually the limit factors for the operations of low-power transponders [1,2]. To increase RFID reading distance, the power of the sense amplifier of the embedded NVM must be as low as possible [3]. Meanwhile reliability of sense amplifiers must be enhanced for reliable operations of transponders.…”

Section: Introductionmentioning

confidence: 99%

A novel voltage-type sense amplifier for low-power nonvolatile memories

Kang

Wang

2010

Sci. China Inf. Sci.

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Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 µm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder. A novel voltage-type sense amplifier for low-power nonvolatile memories.

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“…T HERE has been increasing interest of electrically erasable programmable read only memory (EEPROM) for various embedded applications such as smart card, microcontroller unit, and radio frequency tag [1], [2]. Smart card is an especially promising area since the future's cards are requiring more intelligent and secured functions [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of a new EEPROM cell with spacer select transistor

Lee

Jeong

et al. 2005

IEEE Electron Device Lett.

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In this letter, process technology and cell characteristics of a newly developed compact electrically erasable programmable read only memory cell are described. The cell has spacer select gates on both side walls of floating gate and this gives a very small cell size as well as relief of topology during contact formation. The cell size is 0.95 m 2 with 0.18 m logic process. The cells are programmed and erased by Fowler-Nordheim tunneling. It appears that programming requires 3 ms at 16 V while erasing requires 2 ms at 14 V. It is shown that the cells have very uniform distribution of both programmed and erased threshold voltage. It is also shown that the cell endures up to half million cycling tests. Index Terms-Electrically erasable programmable read only memory (EEPROM) cell, embedded electrically erasable programmable read only memory (EEPROM), endurance, Floating-gate, Fowler-Nordheim (FN) tunneling, select gate.

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Design techniques for EEPROMs embedded in portable systems on chips

Cited by 21 publications

References 11 publications

Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

A novel voltage-type sense amplifier for low-power nonvolatile memories

Fabrication and characterization of a new EEPROM cell with spacer select transistor

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