Design techniques for GaAs MESFET switches

Gardiner, George; Geen, M.W.; Smith, David C.

doi:10.1109/mwsym.1989.38751

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…22 At low signal frequencies, the gate potential is close to that of gate supply voltage (minus possible voltage drop across the blocking resistor), as shown in Fig. 1, a. As the input signal voltage increases, the current saturation takes place.…”

Section: Maximum Switching Power Dispersionmentioning

confidence: 76%

High-Power Switching Using Iii-Nitride Metal-Oxide-Semiconductor Heterostructures

Simin

Shur

Gaška

2006

Int. J. Hi. Spe. Ele. Syst.

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III-Nitride Metal-Oxide-Semiconductor Heterojunction (MOSH) structure consists of a thin dielectric layer deposited on top of a semiconductor heterostructure with a 2D electron gas at the heterojunction interface. MOSH structures are the key components for high-power low-loss, fast RF switches. The paper discusses two types of high-power switches using III-Nitride MOSH structures. The first type uses the MOSH structure as the gate region of an AlGaN/GaN HFET. The second type uses MOSH structure as a switching capacitor. In the 2GHz - 10 GHz frequency range, switching powers from 20 to 60 W/mm have been achieved with the insertion loss below 1 dB.

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Section: Maximum Switching Power Dispersionmentioning

confidence: 76%