Design technology co-optimization for 14/10nm metal1 double patterning layer

Abstract

Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

Advanced process and electron device technology

“…The layout schema generator is used to generate realistic design-like layouts and then uses lithography simulation to determine hotspots and use them to complement design forbidden patterns [68] . Design rules for the new technology node are modified by the guide of the detection and fixing of hotspots [69] . Patterns that pose the highest risk are found and scored based on a pattern complexity comparison and potential yield factors [70] .…”