2022
DOI: 10.1016/j.nanoen.2022.107298
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Designed p-type graphene quantum dots to heal interface charge transfer in Sn-Pb perovskite solar cells

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Cited by 38 publications
(22 citation statements)
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“…The BCBBr‐C4PA‐based device illustrates a much lower leakage current relative to PTAA counterpart (Figure 3e), indicating more photocurrents flow through the device before direct shunting, thus leading to less recombination losses. [ 39 ] The EIS plots were further fitted using the software with the given equivalent circuit (Figure S17, Supporting Information) and the corresponding values were summarized in Table S5, Supporting Information. The attained series resistance ( R s ) and recombination resistance ( R rec ) values for BCBBr‐C4PA‐based device are 22.9 Ω and 45.6 KΩ.…”
Section: Resultsmentioning
confidence: 99%
“…The BCBBr‐C4PA‐based device illustrates a much lower leakage current relative to PTAA counterpart (Figure 3e), indicating more photocurrents flow through the device before direct shunting, thus leading to less recombination losses. [ 39 ] The EIS plots were further fitted using the software with the given equivalent circuit (Figure S17, Supporting Information) and the corresponding values were summarized in Table S5, Supporting Information. The attained series resistance ( R s ) and recombination resistance ( R rec ) values for BCBBr‐C4PA‐based device are 22.9 Ω and 45.6 KΩ.…”
Section: Resultsmentioning
confidence: 99%
“…The average carrier lifetime of SCSs‐perovskite films is shorter than that of the control film, indicating that the charge carriers are more easily extracted by the FTO conductive substrate. [ 33 ] The fast decay lifetime ( τ 1 ) associated with trap‐assisted non‐radiative recombination and the slow decay lifetime ( τ 2 ) attributed to the radiative recombination of free charge carriers in perovskite bulk. For FAPbBr 3 ‐perovskite film, the τ 1 of 57.8 ns was much longer than that of other ones, which manifests this film exhibits the lowest surface traps.…”
Section: Resultsmentioning
confidence: 99%
“…[ 37 ] The perfect energy level matching between the NiO x HTL and perovskite layer is conductive to charge transport, resulting in less nonradiative recombination and less energy loss. [ 60 ] The steady‐state photoluminescence (PL) and time‐resolved PL (TRPL) characterizations were measured to directly examine the charge transfer dynamics at the HTL/PVK interfaces. As shown in Figure 3e, the PL intensity of the perovskite films on XBr/NiO x substrate is lower than that on bare NiO x substrate, indicating higher photoexcited carrier extraction efficiency.…”
Section: Resultsmentioning
confidence: 99%