Designing and Packaging Wide-Band PAs: Wideband PA and Packaging, History, and Recent Advances: Part 1

Samanta, Kamal K.

doi:10.1109/mmm.2016.2589199

Cited by 9 publications

(2 citation statements)

References 27 publications

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“…For radar and communication driven by military applications, system designers are under continuous pressure to achieve the aggressive size, weight and power profiles that can help ensure a sustained, strategic battlefield advantage [1]. But achieving higher power and smaller, lighter components using conventional silicon and GaAs-based power transistors is an ever mounting challenge [2].…”

Section: Introductionmentioning

confidence: 99%

“…For these devices, limitations in component power density, breakdown voltage and thermal reliability are introducing increasingly problematic performance constraints, with significant implications for system reliability, ruggedness and functionality to meet new mission objectives. Ideally each element needs to have a high power output, high gain, and high efficiency, but at the same time must have a very compact application size and require as little heatsinking as possible [1,3]. The recent emergence of GaN-based high electron mobility transistor (HEMT) power amplifiers is equipping radar system designers to achieve broadband and high power operation using smaller power transistors.…”

Section: Introductionmentioning

confidence: 99%

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A fully integrated broadband, high-gain, high-power and high-efficiency UHF amplifier using GaAs HBT and GaN HEMT

Hao

Zhang

Wang³

et al. 2017

IEICE Electron. Express

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This paper presents a compact high-gain, high-efficiency, and broadband (higher than one octave) UHF high-power amplifier (HPA) using gallium arsenide (GaAs) and gallium nitride (GaN) technologies, the broadband HPA was fully integrated in a monolithic microwave integrated circuit (MMIC) with input and output matched to 50 Ω, the total size of the HPA is only 10 × 10 mm 2 . It generates a power gain higher than 44 dB, a continuous wave (CW) output power greater than 10 W and a corresponding power added efficiency (PAE) better than 55 percent across the full band from 220∼520 MHz. This design approach for high power GaN in space saving plastic package is enabling system designers to overcome the challenge to reduce the size, weight, and cost of system designs, while meeting the requirements of higher power, efficiency and reliability.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%