2024
DOI: 10.1088/2631-8695/ad2d9a
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Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application

Neha Mathur,
Shilpi Birla

Abstract: The selection of the title includes designing of SRAM cell using CNTFET because CNTFET overcomes all the issues coming from CMOS technology beyond the 10nm technology node. With the reduction in channel length, the threshold voltage required for CMOS-based technology increases, and the corresponding off-state current decreases. This can prove to be a significant advancement for the semiconductor industry. With the evolution of the new generation of the technology era, especially beyond 10nm, CMOS is not able … Show more

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Cited by 1 publication
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