Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

Rowe, M. W.; Gansen, Eric J.; Greene, M.; Rosenberg, Danna; Harvey, Todd E.; Su, M. Y.; Hadfield, Robert H.; Nam, Sae Woo; Mirin, Richard P.

doi:10.1116/1.2837839

Cited by 9 publications

(5 citation statements)

References 16 publications

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“…Absorption is restricted to the absorption layer by exploiting the different band gaps of GaAs and Al 0.20 Ga 0.80 As. 21 Photons with wavelengths ranging from about 700 to 815 nm are absorbed in the active GaAs layer.…”

Section: Methodsmentioning

confidence: 99%

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

et al. 2015

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We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 106A/W at 50 K.

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Section: Methodsmentioning

confidence: 99%

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

et al. 2015

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“…It can be shown [62] that in the small-signal limit, the increase in the channel current (I ) caused by the addition of N photogenerated holes to the QD plane is given by It can be shown [62] that in the small-signal limit, the increase in the channel current (I ) caused by the addition of N photogenerated holes to the QD plane is given by…”

Section: Photon-number-resolving Detectionmentioning

confidence: 99%

Novel Semiconductor Single-Photon Detectors

Kim

McKay

Kwiat

et al. 2013

Experimental Methods in the Physical Sciences

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“…During illumination, a bias of -0.5 V was applied to the gate to maximize the photoresponse of the detection system; however, 500 ms after each pulse, the gate voltage was temporarily raised to +1.0 V for 1 ms to discharge the dots. Here, the electrical reset pulse flooded the QDs with conduction band electrons which recombined with trapped holes (Gansen et al, 2007a;Rowe et al, 2008).…”

Section: Experimental Demonstration Of Single-photon Detectionmentioning

confidence: 99%

Single-Photon Detection using a Quantum-Dot-Gated Resonant RLC Circuit

Nickel

Talhouarne

Prudhom

et al. 2014

Proc. Wisc. Space Conf.

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Abstract:We report on a novel detection scheme that uses semiconductor quantum dots and electrical resonance to detect single photons of light. Here, a quantum-dot, optically gated field-effect transistor (QDOGFET) is used as the resistive element of a resonant RLC (resistor-inductor-capacitor) circuit. A photon is detected when it photocharges a quantum dot, thus modifying the resistance of the QDOGFET and altering the resonance condition of the surrounding circuit. Because the circuit functions as a bandpass filter, rejecting much of the electrical noise that can obscure weak photo-induced signals, the RLC detection scheme is sensitive enough to detect individual photons of light. IntroductionThe ability to detect single photons of light is fundamental to quantum information science and technology, is extremely useful for astronomical measurements, and may also lead to enhanced deep-space communication systems. In addition to being crucial measurement tools for experiments in quantum optics (Di Giuseppe et al., 2003;Waks et al., 2004;Achilles et al., 2006;, single-photon detectors (SPDs) are needed for quantum communication systems based on quantum-key distribution (Brassard et al., 2000;Hiskett et al., 2006) and form the basis for certain strategies for quantum computing (Knill et al., 2001). In addition, arrays of SPDs are being developed to capture the faint images produced by telescopes (Romani et al., 1999), and they may also find use in the receivers of advanced laserbased (so called 'lasercom') systems that can transmit information at high speeds over interplanetary distances (Boroson et al., 2004;Mendenhall et al., 2007;Hemmati et al., 2007). For all of these applications, desired detector characteristics include high detection rates, low dark counts, high detection efficiency, low timing jitter, and photon-number resolving capability. In addition, SPDs should be compact, exhibit low power consumption, and be tolerant to changes in temperature and other environmental conditions.

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Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

Cited by 9 publications

References 16 publications

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

Novel Semiconductor Single-Photon Detectors

Single-Photon Detection using a Quantum-Dot-Gated Resonant RLC Circuit

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