2014
DOI: 10.1002/cvde.201407087
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Designing Non‐uniform Wafer Micro‐topography for Macroscopic Uniformity in Multi‐scale CVD Processes

Abstract: The potential of an additional degree of freedom (DOF) in the effort to meet film or deposition rate uniformity along the wafer in CVD processes is investigated. The investigation applies to cases of deposition on a wafer with micro-topography where the common practice is a uniform density of patterns or features (e.g., trenches or holes), with the additional DOF as the feature density along the wafer. A non-uniform density is designed with the objective of improving the uniformity; as a consequence, the diffe… Show more

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Cited by 2 publications
(1 citation statement)
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“…Concerning the multiscale modeling of the chemical vapor or plasma‐assisted deposition processes, there are studies coupling the reactor with the predefined feature scale, and studies linking or coupling the reactor with the micro‐ or nanoscale roughness of the deposited film. The difference between “linking” and “coupling” is that coupling refers to a two‐way communication between the models and as a consequence between the scales that the models describe, while linking refers to an one‐way communication from the one model or scale to the other.…”
Section: Introductionmentioning
confidence: 99%
“…Concerning the multiscale modeling of the chemical vapor or plasma‐assisted deposition processes, there are studies coupling the reactor with the predefined feature scale, and studies linking or coupling the reactor with the micro‐ or nanoscale roughness of the deposited film. The difference between “linking” and “coupling” is that coupling refers to a two‐way communication between the models and as a consequence between the scales that the models describe, while linking refers to an one‐way communication from the one model or scale to the other.…”
Section: Introductionmentioning
confidence: 99%