Ultraviolet (UV)‐sensitive semiconductors play a key role in converting UV light into electric signals in a UV photodetector. Two‐dimensional (2D) oxide perovskite, as a kind of green and stable semiconductor materials, exhibits excellent UV detection capabilities. However, the non‐dense nanosheet thin film induces alternative shunts in vertical‐structured devices results in high ohmic leakage currents. Large number of oxygen vacancies in 2D oxide perovskite leads to the adsorption / desorption process of oxygen molecules that slows down the device's response speed. Therefore, an inorganic–organic heterojunction that effectively fills up the pinholes in nanosheet films, effectively suppressing the dark current of the device by 100 000 times are designed. Meanwhile, the construction of inorganic–organic heterojunctions can accelerate the charge carriers’ transporting process, resulting in a fast rise / decay response time of 0.7 ms / 8.5 ms. Moreover, the inorganic–organic heterojunction endows the device with excellent self‐powered performance, presenting a high responsivity of 60 mA W−1. This photodetector demonstrates application potential in a UV communication system with a detection angle of 30 degrees and a close‐range communication of 1.2 m.