Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional 
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Zhou, Wenhan; Zhang, Shengli; Guo, Shiying; Wang, Yangyang; Lü, Jing; Ming, Xing; Li, Zhi; Qu, Hengze; Zeng, Haibo

doi:10.1103/physrevapplied.13.044066

Cited by 81 publications

(42 citation statements)

References 43 publications

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“…The electron mobility along the AD and ZD at room temperature (300 K) was obtained as large as 6 × 10 3 and 4 × 10 3 cm 2 /Vs, respectively. The values are comparable with that of the BiN monolayer (3.49 × 10 3 cm 2 /Vs based on deformation potential theory) but two orders of magnitude lower than that of silicene (2.57 × 10 5 cm 2 /Vs based on deformation potential theory) . It needs to be pointed out that only the longitudinal acoustic (LA) phonons, which play an important role in electron scattering for band transport, were considered in our mobility calculations; other phonon modes, such as the optical modes and out-of-plane (ZA) modes, were neglected to reduce the computational cost.…”

Section: Resultsmentioning

confidence: 55%

“…In the case of holes, however, the compressive/tensile strain has little impact on m h along the AD (m h|AD ). Since a larger band gap and m e are conducive to suppressing leakage currents of FETs, 30 which represent a vital issue limiting the switching of sub-5 nm devices, compressive strain engineering is expected to be helpful for improving the performance of ntype FETs based on B 8 H 4 (see below). To estimate the stability under biaxial strain, we calculated the strain energy and stress−strain curve of the B 8 H 4 monolayer, and the results can be found in Figure S4 of the Supporting Information.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Sang

Wang

Wei

et al. 2021

ACS Appl. Nano Mater.

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As the lightest two-dimensional (2D) metal, borophene was rarely applied in semiconductor devices. The recently synthesized hydrogenated borophene (B 8 H 4 ) opens up the possibility for 2D boron-based semiconductors. Here, by firstprinciples calculations, we evaluate the potential application of B 8 H 4 in nanoscale field-effect transistors (FETs). We disclose the tunable electronic properties of monolayer B 8 H 4 under strain engineering and the promising electrical performance of B 8 H 4based FETs in the ballistic transport regime. We also reveal that pristine B 8 H 4 -FETs can fulfill the ITRS (International Technology Roadmap for Semiconductors) requirement for high-performance devices with 5 nm channel length in terms of on-current, delay time, and power-delay product. Moreover, 5% biaxial compressive strain can further scale B 8 H 4 -FETs down to 3 nm gate length. This study unveils the potential applications of B 8 H 4 in sub-5 nm FETs and underlines the promising role of boron-based semiconductors in future nanoelectronics.

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Section: Resultsmentioning

confidence: 55%

Section: ■ Results and Discussionmentioning

confidence: 99%

Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Sang

Wang

Wei

et al. 2021

ACS Appl. Nano Mater.

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“…Furthermore, 2D V-V binary compounds [27][28][29] have attracted considerable attention, owing to the unique properties of group VA monoelements. Qu et al [30][31][32] found that the strong anisotropic electronic structure including effective mass and density of state in 2D group VA-VA monolayers is helpful for designing high performance 2D field effect transistors. This is especially true for black arsenic phosphorus monolayers, which are considered a potential donor material for 2D solar cells [33].…”

Section: Introductionmentioning

confidence: 99%

Tuning the band gap and effective mass of black arsenic phosphide monolayer by in-plane strain

Mao

Yao

et al. 2022

Mater. Res. Express

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Based on first-principles calculations, the electronic properties of a black AsP monolayer were investigated by applying an external strain. It was found that the electronic property and effective mass of black AsP monolayer exhibits strong anisotropy. Comparing with the armchair direction, the zigzag direction was more resistant to elastic deformation. When the strain was applied along the zigzag direction, a direct-indirect-direct transition of the band gap occurred with increasing tensile strain and compressive strain. The direct to indirect transition occurred at a −2% compressive strain when the strain was applied in the armchair direction. The direct-indirect transition occurred at biaxial compressive and tensile stains of −3% and 3%, respectively. In addition, the effective mass of electrons and holes in the armchair direction is an order of magnitude smaller than that associated with the zigzag direction, suggesting that electron and hole transport will occur preferentially along the armchair direction. Moreover, we found that the effective mass of the black AsP monolayer can be significantly tuned by strain.

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“…We also extracted the energy-delay product (EDP), equals to PDP multiplied τ (PDP × τ), of our test DG ML MoTe 2 FETs in Figure , which considers both the performance (speed) and energy dissipation simultaneously. , Colored lines represent the EDP, the same EDP value is on the line, and each line has different EDP values. Red lines are the minimum ITRS EDP requirements.…”

Section: Resultsmentioning

confidence: 99%

Sub-5 nm Gate Length Monolayer MoTe₂ Transistors

Yang

et al. 2021

J. Phys. Chem. C

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Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-dimensional (2D) semiconductors have been proposed as alternative channel materials. Recently, air-stable 2D trilayer (TL) MoTe2 FETs with a 4 nm gate length have been fabricated experimentally. To explore the device performance limit of the monolayer MoTe2 FETs, we simulate the sub-5 nm gate length double-gate (DG) ML MoTe2 FETs by using the ab initio quantum transport method. We find that when taking negative capacitance technology and underlap into account, the performances of the 3 nm gate length p-type DG ML MoTe2 FETs can satisfy the International Technology Roadmap for Semiconductor 2013 requirements for both the high-performance and low-power applications in the 2028 horizon. Thus, ML MoTe2 as channel materials can scale Moore’s law down to 3 nm.

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Cited by 81 publications

References 43 publications

Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Tuning the band gap and effective mass of black arsenic phosphide monolayer by in-plane strain

Sub-5 nm Gate Length Monolayer MoTe₂ Transistors

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Cited by 81 publications

References 43 publications

Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Hydrogenated Borophene as a Promising Two-Dimensional Semiconductor for Nanoscale Field-Effect Transistors: A Computational Study

Tuning the band gap and effective mass of black arsenic phosphide monolayer by in-plane strain

Sub-5 nm Gate Length Monolayer MoTe2 Transistors

Contact Info

Product

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About

Sub-5 nm Gate Length Monolayer MoTe₂ Transistors