Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Abstract

Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles calculations. Total 696 compositions in four different crystal structures are investigated and essential parameters including stability, vacancy formation, and migration are considered as the descriptor. We select dimer-Cs3Sb2I9 as an optimal HP for memory; the device that uses dimer-Cs3Sb2I9 has ultra-fast switching speed (~20 ns) compared to the device that uses layer-Cs3Sb2I9 (>100 ns). The use of lead-free perovskite avoids environmental problems caused by lead in perovskite. These results demonstrate the feasibility to design the memory with ultra-fast switching speed.

Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors

“…Our MAPbI 3 memristors are admittedly slow, with characteristic times of 10 ms–1 s. The model, however, can be applied to much faster time scales with adequate experimental tools and the specific functions for diffusion and formation characteristics that each case may require. Recently, perovskite memristors for high switching speed with times of 20 ns have been reported by Park et al From the measurement at different duration pulses, we observe that the resistance for Park et al is larger for the larger duration pulse, in agreement with our model. Therefore, we believe that the model has a general significance for the analysis of the behavior of memristors, even though we do not claim a universal model because there is a wide variety of materials and systems, and a larger investigation is needed.…”

Synaptic plasticity in self-powered artificial striate cortex for binocular orientation selectivity

“…The abrupt EPSC increase is generally attributed to the voltage-triggered halogenic vacancy (e.g. bromine vacancy (V Br ) and iodine vacancy (V I )) migration and the hysteresis phenomenon may be originated from the spontaneous diffusion of halogenic vacancy after removal of external bias 42 – 44 . Hence, our memristor displays second-order phenomena with first-order variable of halogenic vacancy distribution into a steady state in long term dynamics and the second-order variable of spontaneously redistribution of halogenic vacancy.…”

Two-Dimensional Organic Semiconductor-Incorporated Perovskite (OSiP) Electronics

“…65 Recently, perovskite memory devices were evaluated by using a high-throughput screening method based on first-principles calculations and select dimer-Cs 3 Sb 2 I 9 for fabricating memory (Figure 4a). 66 A memorydevice-based dimer-Cs 3 Sb 2 I 9 had an ultrafast switching speed (∼20 ns) and exhibited excellent retention properties, and the low-resistance state (LRS) and high-resistance state (HRS) remained stable for 5000 s without degradation (Figure 4b). The work shows the feasibility of designing perovskite-based memory with ultrafast switching speed and well retention properties.…”

“…Therefore, nonvolatile resistive switching memory (RSM) based on halide perovskite is another emerging research field that has been considered due to their low operation voltages and high ON/OFF ratios . Recently, perovskite memory devices were evaluated by using a high-throughput screening method based on first-principles calculations and select dimer-Cs 3 Sb 2 I 9 for fabricating memory (Figure a) . A memory-device-based dimer-Cs 3 Sb 2 I 9 had an ultrafast switching speed (∼20 ns) and exhibited excellent retention properties, and the low-resistance state (LRS) and high-resistance state (HRS) remained stable for 5000 s without degradation (Figure b).…”

“…(a) Schematic illustration of RSM device and (b) data retention properties of the dimer-Cs 3 Sb 2 I 9 . Images (a) and (b) are reproduced with permission from ref . Copyright 2021 Springer Nature.…”