Detachment Limited Kinetics of Gold Diffusion through Ultrathin Oxide Layers

Čechal, Jan; Polčák, Josef; Šikola, Tomáš

doi:10.1021/jp5031703

Cited by 14 publications

(17 citation statements)

References 58 publications

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“…For comparison the same spectra measured for the as-prepared film and for bulk Au are added. The binding energy of the Au 4f core-level shifts, depending on cluster size, cluster–substrate interactions, cluster morphology and charge transfer between cluster and substrates [23–24]. Additionally, the peak ratio of the Au 4f 7/2 and 4f 5/2 excitations differs from the statistical ratio of 4:3 and the linewidths (FWHM) are not equal.…”

Section: Resultsmentioning

confidence: 99%

“…The formation of such a layer would be impeded by the SiO 2 film formed on the Si surface, which would also explain the absence of Au–Si bonds. On the other hand, research results show that the presence of SiO 2 is not an efficient diffusion barrier against metal atoms [24], so Au–Si monoatomic layer could be present on the surface of the support.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

Gapska¹,

Łapiński²,

Syty³

et al. 2018

Beilstein J. Nanotechnol.

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Plasmonic platforms based on Au nanostructures have been successfully synthesized by directional solidification of a eutectic from Au and the substrate. In order to determine homogeneous shape and space distribution, the influence of annealing conditions and the initial thickness of the Au film on the nanostructures was analyzed. For the surface morphology studies, SEM and AFM measurements were performed. The structure of platforms was investigated using XRD and XPS methods. Structural investigations confirmed, that nanostructures consist of metallic Au, growing along the [111] direction. The most homogeneous seems to be the platform obtained by solidification of a 2.8 nm Au film, annealed at 550 °C for 15 min. This sample was subsequently chosen for theoretical calculations. Simulations of electromagnetic field propagation through the produced samples were performed using the finite-difference time domain (FDTD) method. The calculated absorbance, as a result of the FDTD simulation shows a quite good agreement with experimental data obtained in the UV–vis range.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

Gapska¹,

Łapiński²,

Syty³

et al. 2018

Beilstein J. Nanotechnol.

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“…Spinodal‐like dewetting can be readily observed in ultrathin (<10 nm) liquid films where the height fluctuations can be of very high percentage with respect the film thickness and where the narrow band of wavelengths can easily grow, leading to film rupture . The dewetting process of ultrathin (<10 nm) metal films is particularly interesting both from scientific and technological point of views . From a basic scientific point of view, ultrathin metal films allow to study some physical peculiarities of the dewetting process so as the atom–atom interaction: for an ultrathin metal film on an inert substrate the film thickness‐dependent intermolecular forces consist of a long‐range attractive part, and a short‐range repulsive part .…”

Section: Thin Metal Films Dewetting As Nanofabrication and Patterningmentioning

confidence: 99%

Controlled dewetting as fabrication and patterning strategy for metal nanostructures

Ruffino

Grimaldi

2015

Phys. Status Solidi A

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Metal thin films and metal nanostructures find a key role in the actual nanotechnology revolution. They can be engineered for nanoelectronics, plasmonics, and sensing applications. However, the crucial step toward reliable technological applications of metal‐based nanodevices is the development of simple, low cost, versatile, and high‐throughout nanofabrication methodologies. In general, top‐down nanofabrication approaches allow a minimum size of the single nanostructure higher than 10 nm, a high control on spatial regularity and size of the nanostructures, but involve high cost and long processing time. In contrast, bottom‐up approaches allow a minimum size of the single nanostructure lower than 10 nm, a low control on spatial regularity and size of the nanostructures, but involve low cost and short processing time. In this paper, the controlled dewetting process of thin metal films on surfaces is reviewed as a patterning and nanofabrication method for metal‐based nanocomposites, crossing the strenghts of both approaches.

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“…It should be emphasized that in the aforementioned work, the value of voltage applied to the samples exceeded 10.6 V, which is significantly higher than the value of the maximum positive voltage applied to the Au electrode (i.e., 3 V) in our study. Diffusion of Au atoms in HfO 2 , Al 2 O 3 , and SiO 2 thin-films has been reported in another study, but only above 500 °C 53 . Furthermore, it is suggested in the literature that the migration rate of metal ions in the oxide films may be strongly influenced by the structural properties of the films such as porosity and density 40 .…”

Section: Discussionmentioning

confidence: 66%

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

Saylan

Aldosari

Humood

et al. 2020

Sci Rep

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This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

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Detachment Limited Kinetics of Gold Diffusion through Ultrathin Oxide Layers

Cited by 14 publications

References 58 publications

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

Controlled dewetting as fabrication and patterning strategy for metal nanostructures

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

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