Detailed analyses of electric field-induced resistance switching behavior of SrFeO_{3− x} film

Abstract

We investigated the electric field-induced resistance change of SrFeO3− x film as a candidate for memory material. SrFeO3− x film showed hysteresis in its current–voltage curve and distinct pulse-switching properties. The resistance of the sample can be switched by the pulse voltage with the length of 50 ns. The relaxation time of the voltage analyses revealed that the resistance-switching properties originate from both the oxygen migration and the charge injection process. Based on these properties, we found that the magnetic state can also be changed by the application of the electric field.