Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory

Operation lifetime of logic MOS transistors, endurance of memory MOS transistors, trapping noise in analog and RF MOS transistors, and standby power dissipation in all of these transistors, have their common origin in electron-hole GRT (generation-recombination-trapping) at SiO 2 /Si interface traps. Inclusion of GRT in MOS transistor model can be made using the surface-potential approach adopted by the next (second) generation compact model. This paper describes the theoretical analysis of the GRT currents in the long-wide-channel MOS transistor model to serve as the baseline for compact modeling.

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Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Sah

Jie

2006

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances

Kuo

Yang

Wong

et al. 2006

2006 7th Annual Non-Volatile Memory Technology Symposium

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0. 13um and the cell density equals to 2.5 F2/bit, which is very Abstract-In this paper, we will propose a new NAND type small and competitive among the state-of-the-art data flash SONOS cell structure with high efficiency Source Side Injection memory. Since the cell structure is the fully self-aligned and programming and F-N erase. This cell is characterized in high free of source/drain junction, it is also highly scalable.

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Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory

Cited by 2 publications

References 6 publications

Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances

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