Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Schörner, Reinhold; Friedrichs, Peter; Peters, Dethard

doi:10.1109/16.748873

Cited by 77 publications

(47 citation statements)

References 22 publications

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“…Despite lower breakdown field than 4H−SiC polytype (resulting from lower bandgap) the inversion channel mobility observed in 3C−SiC devices is more than one order of magnitude higher compared to 4H−SiC [4]. It is a conse− quence of the near interface traps which are located in the bandgap close to the conduction band for 4H−SiC and limi− ting the transport of electrons in the channel [4]. For 3C−SiC, the interface states are located in the conduction band and they have no effect on the transport properties of the channel [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…The 3C−SiC is a promising mate− rial for high−temperature and high−power applications due to many advantages in comparison with silicon [1,2], e.g., high electric field, high saturation electron velocity, good thermal conductivity as well as the higher bandgap energy (from 2.36 eV for 3C−SiC to 3.23 eV for 4H−SiC polytype) [3]. Despite lower breakdown field than 4H−SiC polytype (resulting from lower bandgap) the inversion channel mobility observed in 3C−SiC devices is more than one order of magnitude higher compared to 4H−SiC [4]. It is a conse− quence of the near interface traps which are located in the bandgap close to the conduction band for 4H−SiC and limi− ting the transport of electrons in the channel [4].…”

Section: Introductionmentioning

confidence: 99%

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Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

Piskorski

Przewłocki

Esteve

et al. 2012

Opto-Electronics Review

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MOS capacitors were fabricated on 3C-SiC n-type substrate (001) with a 10-μm N-type epitaxial layer. An SiO2 layer of the thickness tOX ≈55 nm was deposited by PECVD. Circular Al, Ni, and Au gate contacts 0.7 mm in diameter were formed by ion beam sputtering and lift-off. Energy band diagrams of the MOS capacitors were determined using the photoelectric, electric, and optical measurement methods. Optical method (ellipsometry) was used to determine the gate and dielectric layer thicknesses and their optical indices: the refraction n and the extinction k coefficients. Electrical method of C = f(VG) characteristic measurements allowed to determine the doping density ND and the flat band voltage VFB in the semiconductor. Most of the parameters which were necessary for the construction of the band diagrams and for determination of the basic physical properties of the structures (e.g. the effective contact potential difference ϕMS) were measured by several photoelectric methods and calculated using the measurement data. As a result, complete energy band diagrams have been determined for MOS capacitors with three different gate materials and they are demonstrated for two different gate voltages VG: for the flat-band in the semiconductor (VG = VFB) and for the flat-band in the dielectric (VG = VG0).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

Piskorski

Przewłocki

Esteve

et al. 2012

Opto-Electronics Review

View full text Add to dashboard Cite

show abstract

“…by CMP, capping layers, sacrificial oxidation after activation annealing, etc. ), the present serious drawback, hindering the carrier transport in MOS-based SiC devices seems to be the high density of charged states at SiO 2 /4H-SiC interfaces [113,114,115]. Several works in the last decades have correlated the microstructure of the SiO 2 /SiC interfaces with the electrical properties of MOS-based devices.…”

Section: Interface Transport Properties In the Sio 2 /Sic Systemmentioning

confidence: 99%

“…Furthermore, 3C-SiC is expected to give a better SiO 2 /SiC interface in terms of inversion channel mobility [137,138]. In fact, since the bottom of the conduction band in 3C-SiC is about 0.9 eV lower than in 4H-SiC, the near-interface traps located close to the bottom of the conduction band in 4H-SiC, should be inactive in 3C-SiC, leading to higher inversion channel mobility [113,114].…”

Section: Interfaces Considering Different Sic Polytypesmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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“…This is primarily due to the wider band-gap and higher thermal conductivity of SiC, as discussed in [1][2][3]. Cubic silicon carbide (3C-SiC) is particularly promising for this application due to its inversion layer mobility being higher than in other SiC polytypes [4]. In this article we concentrate on the distributions of the local values of cru- * E-mail: kpisk@ite.waw.pl cial electrical parameters over the gate areas of various 3C-SiC based MOS capacitors, since similar distributions over MOS transistor gate areas influence its basic parameters such as, for example, the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Distributions of electric parameters in MOS structures on 3C-SiC substrate

Piskorski¹,

Przewłocki²,

Esteve³

et al. 2013

Open Physics

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Abstract:In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference φ MS , the barrier height at the gate-dielectric interface E BG and the flat-band in semiconductor voltage V F B were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure. PACS (

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Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Cited by 77 publications

References 22 publications

Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

Nanoscale transport properties at silicon carbide interfaces

Distributions of electric parameters in MOS structures on 3C-SiC substrate

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