Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe 2 , or ceramic, CoFe 2 O 4 , targets. X-ray diffraction (XRD) and Rutherford spectroscopy (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe 2 O 4 [100] / TiN [100] / Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe 2 O 4 and TiN, which is larger for CoFe 2 O 4 thin films grown on the reactive sputtering process with ceramic targets.