Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

Ma, Chunrui; Gong, Yue; Lu, Rongwen; Brown, Emery; Ma, Beihai; Li, Jun; Wu, Judy

doi:10.1039/c5nr03491d

Cited by 39 publications

(58 citation statements)

References 34 publications

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“…PLZT Gate Fabrication : PLZT films with a thickness of 500 nm were epitaxial grown on Nb (1.4%)‐doped (001) single‐crystal SrTiO 3 (Nb:STO) substrates of 5 mm × 10 mm in dimension by using a pulsed laser deposition (PLD) system with KrF excimer laser (a wavelength of 248 nm and pulse width of 25 ns). The fabrication details were reported in the previous papers . Briefly, the substrate temperature was 650 °C and the oxygen partial pressure was maintained at 225 mTorr during PLD.…”

Section: Methodsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

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Lateral p–n junctions take the unique advantages of 2D materials, such as graphene, to enable single‐atomic layer microelectronics. A major challenge in fabrication of the lateral p–n junctions is in the control of electronic properties on a 2D atomic sheet with nanometer precision. Herein, a facile approach that employs decoration of molecular anions of bis‐(trifluoromethylsulfonyl)‐imide (TFSI) to generate p‐doping on the otherwise n‐doped graphene by positively polarized surface electric dipoles (pointing toward the surface) formed on the surface oxygen‐deficient layer “intrinsic” to an oxide ferroelectric back gate is reported. The characteristic double conductance minima V Dirac− and V Dirac + illustrated in the obtained lateral graphene p–n junctions can be tuned in the range of −1 to 0 V and 0 to +1 V, respectively, by controlling the TFSI anions and surface dipoles quantitatively. The unique advantage of this approach is in adoption of polarity‐controlled molecular ion attachment on graphene, which could be further developed for various lateral electronics on 2D materials.

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Section: Methodsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

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“…This has been observed in organic, carbon nanotubes, graphene, and more recently in transition‐metal dichalcogenide (TMD) field‐effect transistors and is typically attributed to unavoidable intrinsic and/or extrinsic charge traps, e.g., SiO 2 surface states and atmospheric contamination . To reduce the impact of such traps, various solutions have been explored including gate‐voltage pulses, vacuum annealing, and ionic‐liquid gating . Although ionic‐liquid gating has been utilized in WS 2 phototransistors and MoTe 2 –graphene photodetectors, the beneficial effect of polymer gating on the performance of photodetectors consisting of atomically thin heterostructures has not yet been explored.…”

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confidence: 99%

Fast and Highly Sensitive Ionic‐Polymer‐Gated WS₂–Graphene Photodetectors

et al. 2017

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been shown to operate as high-speed photodetectors [3] with response times comparable to conventional silicon-based devices, but the absence of a bandgap and lack of significant gain mechanism limits their use for ultrasensitive light detection. Hybrid structures of graphene with semiconductor materials such as quantum dots, [4][5][6] chlorophyll molecules, [7] and MoS 2 [8][9][10] have been shown to enhance light absorption and provide an internal gain mechanism. However, these implementations typically have a limited operational bandwidth of less than 10 Hz which hampers their use in real world applications.Slow response times in these systems are produced by the long-lived trapping of charges, often manifested as hysteresis in gate-voltage sweeps. This has been observed in organic, carbon nanotubes, graphene, and more recently in transitionmetal dichalcogenide (TMD) field-effect transistors and is typically attributed to unavoidable intrinsic and/or extrinsic charge traps, e.g., SiO 2 surface states [11][12][13][14] and atmospheric contamination. [12,13,[15][16][17] To reduce the impact of such traps, various solutions have been explored including gate-voltage pulses, [11,18,19] vacuum annealing, [20,21] and ionic-liquid gating. [22,23] Although ionic-liquid gating has been utilized in WS 2 phototransistors [24] and MoTe 2 -graphene photodetectors, [25] the beneficial effect of poly mer gating on the performance of photodetectors consisting of atomically thin heterostructures has not yet been explored.In this work, we report the first study of WS 2 -graphene heterostructure photodetectors with an ionic-polymer gate. We demonstrate a gate-tunable responsivity up to 10 6 A W −1 , which is comparable with other heterostructure devices, [4][5][6][7]9,10] and surpasses that of graphene or TMD photodetectors by at least four orders of magnitude. Our devices reach a −3 dB bandwidth of 1.5 kHz, without the need for gatevoltage pulses, leading to sub-millisecond rise and fall times. The observed 10 3 -fold increase of photodetection bandwidth, when compared to other heterostructure photodetectors, is enabled by the enhanced screening properties of the mobile ions in our ionic polymer top gate, which act to compensate the charge traps limiting the speed of previous devices. Our devices have a detectivity of D* = 3.8 × 10 11 Jones, which is approaching that of single-photon counters, and are able to operate on a broad spectral range (400-700 nm). These properties make ionic-polymer-gated WS 2 -graphene photodetectors highly suitable for video-frame-rate imaging applicationsThe combination of graphene with semiconductor materials in heterostructure photodetectors enables amplified detection of femtowatt light signals using micrometer-scale electronic devices. Presently, long-lived charge traps limit the speed of such detectors, and impractical strategies, e.g., the use of large gatevoltage pulses, have been employed to achieve bandwidths suitable for applications such as video-frame-rate imaging. Here, atomically thin gr...

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“…Moreover, these additional steps can prevent trapping of solvent and water molecules at the graphene/perovskite interface. These trapped small molecules are elusive to many characterization techniques, but are critical and detrimental to optoelectronic process through impeding the interfacial charge transfer and even introducing artifacts to the devices . The absence of the trapped impurities at the graphene/perovskite interface is reflected by the surface and interface sensitive characterization, and the device performance data.…”

Section: Introductionmentioning

confidence: 99%

Scalable Graphene‐on‐Organometal Halide Perovskite Heterostructure Fabricated by Dry Transfer

Qin

Kattel

Kafle

et al. 2018

Adv Materials Inter

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Graphene, a single layer conductor, can be combined with other functional materials for building efficient optoelectronic devices. However, transferring large‐area graphene onto another material often involves dipping the material into water and other solvents. This process is incompatible with water‐sensitive materials such as organometal halide perovskites. Here, a dry method is used and succeeded, for the first time, in stacking centimeter‐sized graphene directly onto methylammonium lead iodide thin films without exposing the perovskite film to any liquid. Photoemission spectroscopy and nanosecond time‐resolved photoelectrical measurement show that the graphene/perovskite interface does not contain significant amount of contaminants and sustain efficient interfacial electron transfer. The use of this method in fabricating graphene‐on‐perovskite photodetectors is further demonstrated. Besides a better photoresponsivity compared to detectors fabricated by the conventional perovskite‐on‐graphene structure, this dry transfer method provides a scalable pathway to incorporate graphene in multilayer devices based on water‐sensitive materials.

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Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

Cited by 39 publications

References 34 publications

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Fast and Highly Sensitive Ionic‐Polymer‐Gated WS₂–Graphene Photodetectors

Scalable Graphene‐on‐Organometal Halide Perovskite Heterostructure Fabricated by Dry Transfer

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Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

Cited by 39 publications

References 34 publications

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Fast and Highly Sensitive Ionic‐Polymer‐Gated WS2–Graphene Photodetectors

Scalable Graphene‐on‐Organometal Halide Perovskite Heterostructure Fabricated by Dry Transfer

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Fast and Highly Sensitive Ionic‐Polymer‐Gated WS₂–Graphene Photodetectors