Detectability Challenges of Bridge Defects in FinFET Based Logic Cells

Forero, Freddy; Galliere, Jean-Marc; Renovell, Michel; Champac, Victor

doi:10.1007/s10836-018-5714-0

Cited by 5 publications

(3 citation statements)

References 35 publications

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“…The probability of occurrence of the short defects depends on the memory array architecture and how its layout is made. Typically, wider lines placed closer to other lines are more likely to present bridge defects [29]. The defects that are shown in Fig.…”

Section: Short Defects That Can Be Detectedmentioning

confidence: 99%

Analysis of Bridge Defects in STT-MRAM Cells Under Process Variations and a Robust DFT Technique for Their Detection

Champac

Gómez

Forero

et al. 2019

VLSI-SoC: Design and Engineering of Electronics Systems Based on New Computing Paradigms

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Spin-Transfer-Torque Magnetic RAM (STT-MRAM) is a promising non-volatile memory technology due to its ultra-integration density capability, nanosecond speeds for reading and writing operations and CMOS/FinFET fabrication process compatibility. STT-MRAMs may be affected by manufacturing defects, which may be challenging to detect under process variations in deeply scaled semiconductor technologies. Because of this, the importance of test techniques to target defects in this emerging memory technology. In this work, an STT-MRAM bitcell is presented with its states due to the magnetic orientation of the ferromagnetic layers. The read and write operations of an STT-MRAM cell, including the read and write circuits, are revised in the scope of this work. The write time definition for an STT-MRAM cell is also revised. A defect model is used to analyze the STT-MRAM cell under short defects in the presence of process variations. A Design-For-Test (DFT) circuit to detect short defects in the STT-MRAM cells is proposed. The proposed methodology is based on the observation that a short defect modifies the amplitude of the currents entering and leaving the memory cell. Hence, the current difference between the currents entering and leaving the memory cell is used to discriminate between good cells and defective cells. The proposed DFT circuitry is robust to process-induced parameters variations in the memory cell. In such a way, defects detection probabilities are increased, and a high-quality product can be guaranteed.

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Section: Short Defects That Can Be Detectedmentioning

confidence: 99%

Analysis of Bridge Defects in STT-MRAM Cells Under Process Variations and a Robust DFT Technique for Their Detection

Champac

Gómez

Forero

et al. 2019

VLSI-SoC: Design and Engineering of Electronics Systems Based on New Computing Paradigms

Self Cite

View full text Add to dashboard Cite

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“…Semiconductors with complex three‐dimensional (3D) structures are widely used in the current area of nanoscale manufacturing (Forero et al ., ). An in‐wafer 3D multiparametric measurement with nanoscale resolution is increasingly in demand to guarantee manufacturing accuracy and optimise process control (Yang et al ., ; Zhang et al ., ; IEEE Xplore Digital Library, ).…”

Section: Introductionmentioning

confidence: 99%

Multiple parametric nanoscale measurements with high sensitivity based on through‐focus scanning optical microscopy

Peng

Hao

Pan

et al. 2019

Journal of Microscopy

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Summary High‐throughput through‐focus scanning optical microscopy (TSOM) involves defocusing along the optical axis and capturing a series of defocus images and is useful in optical nanoscale measurement. However, TSOM is usually affected by its optical and mechanical noises. In this study, the issue of sensitivity and application in three‐dimensional (3D) multiple parameter measurement of TSOM is investigated. First, a TSOM system with objective scanning and its relative simulation algorithm are proposed. Second, based upon the system and algorithm, an experiment on an isolated Au line is performed and the corresponding matching library is established. Comparing the experimental TSOM image and simulated TSOM images of the library, 3D multiple parameter results of the Au line are extracted. Third, the precision of the system is analysed through a fidelity test particular for through‐focus images. According to this study, the system is robust to the optical and mechanical noises and hence could be useful in 3D multiple parametric measurement and high‐volume nanomanufacturing.

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“…Resistive opens and resistive bridges result often in SDFs [1,2,3] which are hard to detect during production testing. Since they may evolve rather early in the circuits lifetime and turn into catastrophic faults, they have to be covered during the test of high-quality systems [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

Identifying Resistive Open Defects in Embedded Cells under Variations

Najafi-Haghi

Wunderlich

2023

J Electron Test

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Small Delay Faults (SDFs) due to weak defects and marginalities have to be distinguished from extra delays due to process variations, since they may form a reliability threat even if the resulting timing is within the specification. In this paper, it is shown that these faults can still be identified, even if the corresponding defect cell is deeply embedded into a combinational circuit and its observability is restricted. The results of a few delay tests at different voltages and frequencies serve as the input to machine learning procedures which can classify a circuit as marginal due to defects or just slow due to variations. Several machine learning techniques are investigated and compared with respect to accuracy, precision, and recall for different circuit sizes and defect scales. The classification strategies are powerful enough to sort out defective devices without a major impact on yield.

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Detectability Challenges of Bridge Defects in FinFET Based Logic Cells

Cited by 5 publications

References 35 publications

Analysis of Bridge Defects in STT-MRAM Cells Under Process Variations and a Robust DFT Technique for Their Detection

Analysis of Bridge Defects in STT-MRAM Cells Under Process Variations and a Robust DFT Technique for Their Detection

Multiple parametric nanoscale measurements with high sensitivity based on through‐focus scanning optical microscopy

Identifying Resistive Open Defects in Embedded Cells under Variations

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