Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli, Esra Evcin; Tan, Serhat Orkun; Tecimer, Habibe Uslu; Altındal, Ş.

doi:10.1016/j.physb.2020.412457

Cited by 22 publications

(8 citation statements)

References 54 publications

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“…By the extrapolating of the area where the I-V graph is linear, it is passed from experimental to theoretical calculation. Using the results of these calculations and the equations given below, the results in Table 1 were obtained (Rhoderick, 1978); These findings suggest that the literature's description of barrier inhomogeneity as the cause of the decrease in n values and rise in ΦBo values with rising temperature (Werner & Güttler, 1991;Baydilli et al, 2020).…”

Section: Resultsmentioning

confidence: 66%

“…The interface carriers are trapped, the concentration of free carriers diminishes, and the serial resistance effect grows as the n values rise with decreasing temperature (Evcin Baydilli et al, 2020). Figure 8 belongs to our previous study (Evcin Baydilli et al, 2020). Unlike in Au/n-GaAs type M/S structure, there is a 7% Gr doped-PVA interfacial layer.…”

Section: Resultsmentioning

confidence: 82%

“…Figure 7 shows temperature-dependent serial resistance computed by the principle of Ohm, Norde and Cheungs' first and second functions. With a few small variations brought on by the various I-V regions that each method considers, it can be argued that the behavior of the results acquired with each method are consistent with one another (Evcin Baydilli et al, 2020;Pehlivanoglu, 2021). The interface carriers are trapped, the concentration of free carriers diminishes, and the serial resistance effect grows as the n values rise with decreasing temperature (Evcin Baydilli et al, 2020).…”

Section: Resultsmentioning

confidence: 96%

“…In M/S structures, the image-force, the tunneling, the edge, and the serial resistance effects are the factors that cause deviation from the ideal condition (Evcin Baydilli et al, 2020). The serial resistance (Rs) effect, among the most crucial of them, is the semiconductor's neutral region's resistance to the flow of current across the M/S contact, which is located outside the deplation region.…”

Section: Introductionmentioning

confidence: 99%

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The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

Baydilli

2023

Gazi University Journal of Science Part A: Engineering and Innovation

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To enable comparison with the literature, this study seeks to assess the temperature susceptibility of serial resistance (Rs) features of the Au/n-GaAs type M/S structure, which is acceptable the benchmark sample. The serial resistance features of the sample were computed separately withal principal of Ohm, Norde, and Cheungs' functions. The current-voltage (I-V) data used in order to compute were evaluated at the voltage values between +2V and -2 V and temperature values between 120K and 360K in 60K steps. Each computation method was also compared one another other. As a result, the fact that the Rs values computed using principal of Ohm, Norde functions and Cheungs' functions tended to reduce with rising temperature, as anticipated by the literature results. In addition, it was determined that, with only tiny variations, the temperature susceptibility of Rs is consistent across all computation methods. In addition, as a result of the comparison with the literature, it was concluded serial resistance is less of an issue when a polymer interfacial layer is present at the metal-semiconductor contact region. The Rs parameter of the M/S structure is, in essence, a sensitive function of temperature and input voltage.

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Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

Baydilli

2023

Gazi University Journal of Science Part A: Engineering and Innovation

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“…The temperature dependence of n and Φ b0 are graphically shown in Figure 5. Values of n greater than 1, which is far from the ideal (𝑛=1), are generally attributed to the voltage drop on the polymer interface material, the distribution of states, and the inhomogeneity of the barrier at the polymer-semiconductor material interface [27,[29][30][31][32]. To explore in more detail, the temperature dependence of n, the graph of n-1000/T was plotted and shown in Figure 6.…”

Section: T Dependent I-v Analysismentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

Özden

Avcı

Pakma

et al. 2022

J Inorg Organomet Polym

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A photopolymer based Al/NOA60/p-Si (metal-polymer-semiconductor) MPS device was fabricated and the current transport properties were investigated by using the forward bias current-voltage (I-V) characteristic in the temperature range of 80-300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at ±1V. Temperature-dependent I-V measurements (I-V-T) were analyzed on the basis of thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from ideal TE theory has been attributed to the effect of BH inhomogeneities.Gaussian distribution (GD) of BH model has applied the I-V-T results and double GD BH with mean values of 0.75±0.08 eV (80 -140 K) and 1.02±0.11 eV (140 -300 K) were calculated. Moreover, the A* value of 64.73 A/cm 2 K 2 was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with double GD BH model for a wide temperature region.

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The temperature dependent negative dielectric constant phenomena of Au/n–GaAs structure with CZO interfacial layer

Kınacı

2021

J Mater Sci: Mater Electron

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Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Cited by 22 publications

References 54 publications

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

The temperature dependent negative dielectric constant phenomena of Au/n–GaAs structure with CZO interfacial layer

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