Detection of heavy metal ions using meander gated GaN HEMT sensor

Mishra, Saroj Kumar; Kachhawa, Pharyanshu; Thakur, Rajiv R.; Jain, Amber Kumar; Singh, Kuldip; Chaturvedi, Nidhi

doi:10.1016/j.sna.2021.113119

Cited by 16 publications

(4 citation statements)

References 39 publications

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“…The change in Id reflects how that in Vca affects the 2DEG concentration in the channel. Since the formed capacitors are combined in series, the dielectric potential can be expressed as follows [30]:…”

Section: Resultsmentioning

confidence: 99%

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

Gu,

Jiang,

et al. 2023

IEEE J. Electron Devices Soc.

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A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe 3+ specific detection. The crystal quality and surface morphology of the epitaxial material were characterized by X-ray diffraction and atomic force microscopy. The analysis of I-V characteristics and the current response of the device at a constant drain bias of 7 V show that the current response variation increased with an increase in Fe 3+ concentration. Additionally, the sensitivity of the 5-fold-gate HEMT sensor was calculated, which was found to be greater. The current response results of the HEMT after adding multiple heavy metal ions proved that the sensor specifically recognizes Fe 3+ . Therefore, the 2-mercaptobutanedioic acid modified 5-fold gate HEMT sensor has great potential in the real-time detection of trace Fe 3+ .

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Section: Resultsmentioning

confidence: 99%

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

Gu,

Jiang,

et al. 2023

IEEE J. Electron Devices Soc.

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“…Excess of lead can cause harmful effects on renal, nervous, cardiovascular systems and exposure to foetus can cause miscarriage, premature and low body weight births. Similarly, excess in zinc makes a person more vulnerable to gastro intestinal and respiratory tract disorders while higher doses can cause prostate cancer [154]. The bird's eye view of the earlier reported work is rendered in Table VI.…”

Section: Heavy Metal Ion Sensorsmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

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“…Multiple bent gates are connected and decrease the transconductance while increasing the impact of an electric field on the 2DEG channel. The meandering gate structure has higher electric field strength and higher current near the drain compared to conventional shapes, as well as larger effective sensing area [21].…”

Section: Introductionmentioning

confidence: 99%

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors

Huang

Jiang

et al. 2023

Nanotechnology

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Carcinoembryonic antigen (CEA) is a well-known biomarker and validated serum biomarker for lung cancer. We introduce a simple label-free method for CEA detection. Specific recognition of CEA was made possible by immobilizing CEA antibodies in the sensing region of AlGaN/GaN high-electron-mobility transistors. The biosensors have a detection limit of 1 fg/mL. This approach has advantages of integration, miniaturization, low cost, and rapid detection compared to other testing methods for lung cancer and could be used in future medical diagnostics.

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Detection of heavy metal ions using meander gated GaN HEMT sensor

Cited by 16 publications

References 39 publications

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors

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Detection of heavy metal ions using meander gated GaN HEMT sensor

Cited by 16 publications

References 39 publications

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

A highly sensitive sensor for carcinoembryonic antigen based on AlGaN/GaN high-electron-mobility transistors

Contact Info

Product

Resources

About

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection