Detection of Intermediates in Thermal Chemical Vapor Deposition Process   Using Tetraethoxysilane

Satake, Tetsuya; Sorita, Tetsuji; Fujioka, Hirofumi; Adachi, Hiroshi; Nakajima, Hiroyuki

doi:10.1143/jjap.33.3339

Cited by 18 publications

(18 citation statements)

References 5 publications

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“…the gas chromatography. 11 In this study, however, any polymers were not observed in the range of mass number lower than 400. Figure 6 shows the FTIR spectrum of SiO 2 films prepared on p-type Si wafers.…”

Section: Dissociation In Teos/o 2 Plasmacontrasting

confidence: 60%

Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane

Okimura

Maeda

1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Dissociations in plasma enhanced chemical vapor deposition for SiO2 deposition using tetraethoxysilane (TEOS) were investigated by means of mass spectrometry. First, we showed basic dissociation patterns of TEOS as a function of electron energy. It was shown that TEOS dissociates by electron impact at electron energies below 8 eV, removing the ethyl group (C2H5). Next, we presented dissociation patterns in TEOS/He plasma. Finally, dissociation in TEOS/O2 plasma was studied. It was shown that high molecular intermediate products containing carbon and hydrogen, such as Si(OC2H5)2H, Si(OC2H5)2OCH3, and Si(OC2H5)3OCH2, are present only in the TEOS/He plasma but not in the TEOS/O2 plasma. It was also shown that eliminated hydrocarbon gases such as C2H2, C2H4, C2H5, and OC2H5 are converted into H2O and CO2. Fourier-transformed infrared and x-ray photoelectron spectroscopy studies revealed that the degree of impurity concentration in the film decreased with increasing O2 concentration. Characteristics of metal–insulator–semiconductor devices reflected the degree of impurity concentration in the oxide films. It was found that oxygen gas plays an indispensable role for preparing high quality SiO2 films by oxidizing the intermediate dissociation products and eliminating hydrocarbon gases.

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Section: Dissociation In Teos/o 2 Plasmacontrasting

confidence: 60%

Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane

Okimura

Maeda

1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The thermal decomposition of tetraethoxysilane (TEOS) in gas phase has been studied (Desu 1989;Van Der Vis et al 1993;Sataka et al 1994;Sirakami et al 1996) in absence and in presence of O2, water and other reagents as proposed by Van Der Vis et al (1993). The decomposition products have been revealed (Van Der Vis et al 1993;Sataka et al 1994) and the scheme of the processes taking place has been proposed (Sirakami et al 1996;Davazoglou and Vamvakas 1999).…”

Section: Introductionmentioning

confidence: 99%

“…The decomposition products have been revealed (Van Der Vis et al 1993;Sataka et al 1994) and the scheme of the processes taking place has been proposed (Sirakami et al 1996;Davazoglou and Vamvakas 1999). Kamiya et al (1990) studied the decomposition of gels based on triethoxymethylsilane (MtEOS) in different media.…”

Section: Introductionmentioning

confidence: 99%

Thermochemical behaviour of Ru(II) complex-SiO2 microcomposites

et al. 2007

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The results from DSC and thermogravimetric analysis of gels produced from a mixture of tetraethoxysilane (TEOS) and octyltriethoxysilane (OtEOS) both with and without immobilized Ru(II) tris(4,7-diphenyl-1,10-phenanthroline) dichloride as well as DSC and TG data for films deposited by deep-or spincoating from the same gels, are reported. The initial products are characterized by elemental analysis, IR, solid state NMR and mass spectroscopy. Elemental analysis and IR spectroscopy are applied for identification of some of the intermediates obtained after heating at different temperatures. The final products are characterized by X-ray diffractometry. A hypothesis for the thermodecomposition processes taking place is proposed. The results reported contribute to elucidation of the properties as well as the temperature intervals in which the studied microcomposites could be used as sensing components of oxygen sensors.

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“…Several previous studies 13,14,27,28 have examined and reported the chemical reaction kinetics of TEOS/O 3 APCVD. Based on these, we developed an overall reaction model, described in more detail elsewhere.…”

Section: B Formation Rate Of Intermediatesmentioning

confidence: 99%

Effect of cluster/particle deposition on atmospheric pressure chemical vapor deposition of SiO2 from four gaseous organic Si-containing precursors and ozone

Fujimoto

Okuyama

Yamada

et al. 1999

Journal of Applied Physics

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In order to analyze the particle generation and its effect on the SiO 2 thin film in an atmospheric pressure chemical vapor deposition ͑APCVD͒ process using four organic silicon vapors and ozone gas, gas-phase particle generation, growth, transportation and vapor-cluster/particle codeposition processes were studied experimentally and theoretically using a flow-type vertical tube reactor. Decomposition reaction rates of four organic silicon vapors ͑tetraethylorthosilicate, triethoxysilane, tetramethylorthosilicate, and octamethylcyclotetrasiloxane͒ due to the O•oxidation were determined by arranging the number concentrations of the generated particles in Arrhenius plots. The obtained activation energies and frequency factors of reaction rate constants were used to simulate the vapor-cluster/particle codeposition in the CVD process. In the numerical simulation, computational fluid dynamics equations ͑continuity, momentum, and energy conservation equations͒ were solved to evaluate the gas velocity, vapor concentration, and temperature profile inside the reactor. Particle population balance equations based on discrete-sectional presentation for the particle size spectrum were solved coupling with diffusion equations of vapors and clusters/particles. This numerical simulation code could explain the vapor-cluster/particle codeposition in the thin film preparation by the APCVD process. The film growth rate and the surface morphology of the film could be reasonably explained by the deposition flux and the size of deposited clusters/particles obtained as numerical simulation results, respectively.

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Detection of Intermediates in Thermal Chemical Vapor Deposition Process Using Tetraethoxysilane

Cited by 18 publications

References 5 publications

Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane

Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane

Thermochemical behaviour of Ru(II) complex-SiO2 microcomposites

Effect of cluster/particle deposition on atmospheric pressure chemical vapor deposition of SiO2 from four gaseous organic Si-containing precursors and ozone

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