Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers

Lee, W. P.; Yow, H. K.; Tou, Teck Yong

doi:10.1149/1.1808093

Cited by 2 publications

(2 citation statements)

References 22 publications

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“…1d-f, respectively. These kite-shaped COPs featured similar characteristics as those reported previously, 23 whereby the nanovoids in each COP are found to always align in either ͓001͔, ͓010͔, ͓001 ¯͔, or ͓01 ¯0͔ direction but clustered in pairs or triplets around a center point. AFM cross-sectional analyses for the kite-shaped COPs reveal G249 Journal of The Electrochemical Society, 153 ͑3͒ G248-G252 ͑2006͒ G249 two ͕111͖ planes as defined by the sidewall angles with respect to the ͑100͒ surface plane in the order of 55°, and two non-͕111͖ planes at the other two edges, as defined by the sidewall angles with respect to the ͑100͒ surface plane that deviate significantly from 55°.…”

Section: Resultssupporting

confidence: 80%

“…Nevertheless, there was no detailed report on the mapping distribution of COPs or the type and shape of COPs analyzed. Our previous work 23 on NCZ silicon crystals using silicon nitride ͑nitride-doped NCZ͒ as the source of nitrogen dopants showed that COPs can take the form of kite-shaped nanovoids when viewed from the ͑100͒ surface plane. In extension to that report, we have conducted a comprehensive study of the nitride-doped NCZ silicon wafers based on nondestructive techniques using atomic force microscopy ͑AFM͒ and field emission scanning electron mi-z E-mail: hkyow@mmu.edu.my croscopy ͑FE-SEM͒.…”

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Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers

Lee

Yow

Tou

2006

J. Electrochem. Soc.

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Grown-in crystal-originated particles ͑COPs͒ on the surface of silicon nitride-doped Czochralski ͑CZ͒-grown silicon wafers were characterized using atomic force microscopy and scanning electron microscopy. These nanometer-scale COPs are categorized into kite-shaped, parallelepiped-plate and needle-shaped COPs, respectively, with unique features distinctively different from the octahedral voids commonly found in conventional CZ-grown silicon wafers. Based on the experimental data obtained, it is postulated that nitrogen dopants in the silicon crystals could influence the formation of these COPs with different morphologies and sizes. This may be supported by a simple analysis of the mapping distribution of COPs on the nitride-doped CZ-grown silicon wafer, which reveals that the densities of the smaller-size parallelepiped-plate and needle-shaped COPs are negligible at the center of the silicon wafer but increase to a significant proportion comparable to that of the kite-shaped COPs at the outer edges of the silicon wafer along the radial directions. These observations are thought to correlate well with the presence of nitrogen dopants and the radial concentrations of the excess free vacancy.

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Section: Resultssupporting

confidence: 80%

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confidence: 99%

Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers

Lee

Yow

Tou

2006

J. Electrochem. Soc.

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Nondestructive Localization of Surface Particles for Elemental Compositional Analysis by TOF-SIMS

Lee¹,

Koh²,

Yow³

et al. 2005

Electrochem. Solid-State Lett.

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A surface particle localization system based on oblique angle dark field optical scattering has been incorporated into time-of-flight secondary ion mass spectrometry. ͑TOF-SIMS͒ In this design, oblique incident laser light would be scattered to all directions by surface particles on silicon wafer and be collected at oblique angle to determine the x-y coordinate of the particle detected. This fast and nondestructive technique is an effective alternative to the standard method for imaging and localization of surface particles using primary ion bombardment by TOF-SIMS which might result in the alteration or loss of physiochemical information from the surface particles.Silicon wafers with surface areas virtually free of external contaminants are of utmost importance for achieving acceptable process yield in ultralarge scale integrated circuit fabrication. Effective localization of surface particles on silicon wafers for accurate elemental composition analysis 1,2 could provide essential information for identifying the source of contamination and thus allow preventive control measures to be implemented before process yield is significantly compromised during manufacturing, wafer storage and handling processes. In this respect, time-of-flight secondary ion mass spectrometry ͑TOF-SIMS͒ has emerged as one useful analytical tool for the elemental composition diagnosis of surface particles due to the high transmission and high mass resolution capability for ions with different masses simultaneously. 3 In a typical surface particles analysis using TOF-SIMS, secondary electrons generated 4 from material surface by the bombardment of high energy primary ions are collected to indirectly localize surface particles during timeconsuming and exhaustive scanning process on selected wafer surface area. Once the particles of interest are located, detailed elemental composition analysis by TOF-SIMS is carried out. However, the bombardment of solid surface by high energy primary ions could remove material from solid surface 5 and thus may result in inaccurate acquisition or alteration of physiochemical information from the surface particles.An optical microscope coupled with a charge coupled device ͑CCD͒ camera and an external light source for illumination are usually attached to TOF-SIMS for alignment of wafers on x-y stage with respect to the center position of the ion gun. This simple optical microscopy setup could provide fast and nondestructive localization of surface particles with size larger than the optical resolution of the microscope prior to the primary ion bombardment onto the wafer surface in TOF-SIMS. However, optical microscopy is limited by the resolving power of the microscope 6 and thus a limited magnification with sufficient depth of field. 7 The performance requirement for the optical microscopy system might even be more stringent if the surface particles are optically transparent.Modern TOF-SIMS system can analyze microareas and generate surface images with a high lateral resolution of 0.1 m or less 8-10 by using ...

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Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers

Cited by 2 publications

References 22 publications

Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers

Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers

Nondestructive Localization of Surface Particles for Elemental Compositional Analysis by TOF-SIMS

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