Detection of Sub-Design Rule Shorts for Process Development in Advanced Technology Nodes

Lei, Ming; Wu, Kevin

doi:10.1109/tsm.2017.2741973

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…[4][5][6][7] Failure mode classification was demonstrated by changing the scan direction of EB, considering the device circuit. 8 The VC method should be applicable to NW-SD contact inspection, although there is no experimental verification yet. This paper and our previous report 9 describe the validity of the VC-based NW-SD contact inspection.…”

Section: Introductionmentioning

confidence: 99%

“…Qualitatively, the impact of changing the scan direction of EB was discussed with an RC model. 7,8 It is already reported that rough estimation of parasitic resistance is only possible by evaluating VC. 10 Pulsed irradiation of EB by a special apparatus has been applied to analyze the charging dynamics, which gives information on both resistance and capacitance.…”

Section: Introductionmentioning

confidence: 99%

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Contact inspection and resistance–capacitance measurement of Si nanowire with SEM voltage contrast

Ohashi

Hasumi

Ikota

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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A methodology to evaluate the electrical contact between nanowire (NW) and source/drain in NW FETs was investigated with SEM voltage contrast (VC). The electrical defects are robustly detected by VC. The validity of the inspection result was verified by transmission electron microscope (TEM) physical observations. Moreover, estimation of the parasitic resistance and capacitance was achieved from the quantitative analysis of VC images, which are acquired with different scan conditions of an electron beam (EB). A model considering the dynamics of EB-induced charging was proposed to calculate the VC. The resistance and capacitance can be determined by comparing the model-based VC with experimentally obtained VC. Quantitative estimation of resistance and capacitance would be valuable not only for more accurate inspection but also for identification of the defect point.

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