Detection of terahertz waves using low-temperature-grown InGaAs with 1.56μm pulse excitation

Takazato, A.; Kamakura, M.; Matsui, Takashi; Kitagawa, Jiro; Kadoya, Y.

doi:10.1063/1.2712503

Cited by 62 publications

(33 citation statements)

References 14 publications

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“…Fiber lasers usually emit at 1.55 μm, whose photon energy of 0.8 eV is much lower than the bandgap of GaAs. Therefore, PC antennas using semiconductors with narrower bandgaps, such as Ge [22] and InGaAs [23][24][25][26][27][28], have also been investigated. One of the main drawbacks in using narrow bandgap semiconductors, however, is the low resistivity of the PC gap which increases the thermal noise in PC antennas when they are used as THz detectors.…”

Section: Optimization Of Pc Antenna Designmentioning

confidence: 99%

Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices

Tani

Yamamoto

Estacio

et al. 2012

J Infrared Milli Terahz Waves

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Recent studies on the techniques and development of photoconductive (PC) semiconductor devices for efficient generation and detection of terahertz (THz) pulsed radiation are reported. Firstly, the optimization of PC antenna design is discussed. The PC detection of THz pulsed radiation using low-temperature grown GaAs with 1.55-μm wavelength probe is then described. Finally, the enhancement of THz radiation from InSb by using a coupling lens and magnetic field is investigated. These results reveal valuable insights on the design of an efficient, compact, and cost-effective THz time-domain spectroscopy system based on 1.55-μm fs laser sources.

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Section: Optimization Of Pc Antenna Designmentioning

confidence: 99%

Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices

Tani

Yamamoto

Estacio

et al. 2012

J Infrared Milli Terahz Waves

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“…We tested an optical fiber designed for the telecom band (∼1.5 μm wavelength). Recently, studies showed that this telecom band pulsed light can be used for the THz-TDS system [10,11]. However, the general purpose singlemode fiber (categorized in ITU-T G.652 B) for telecommunication has quite a large level of dispersion-around 20 ps/nm/km at a wavelength of 1.5 μm.…”

Section: Dispersion Test Of Optical Fibermentioning

confidence: 99%

Development of Terahertz Pulse Wave Diagnostics for a Magnetized Fusion Plasma Reactor

Tokuzawa

Kadoya

Tani

et al. 2013

Plasma and Fusion Research

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Terahertz wave diagnostics have been developed for current and future high-temperature and high-density fusion plasma measurements. Since the combined system of a reflectometer and a delayometer requires a wideband frequency source for the density profile measurements, a terahertz pulse is a possible candidate. A test system using terahertz time-domain spectroscopy has been constructed to develop the diagnostics. The system utilizes a femtosecond fiber laser as a pumping source and a bow-tie-type photoconductive antenna as a THz wave emitter. An output THz pulse with a frequency of up to 2 THz has been obtained. Some investigations involving measurement of the refractive index of a test material are performed, and the transmission dispersion effects of an optical fiber are determined.

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“…Optimized photoconductive materials are essential for developing photoconductive antennas with high sensitivity and broadband performance. Thus materials for photoconductive antennas have been thoroughly studied over the years, from the first demonstration of Arion irradiated crystalline Si epitaxially grown on sapphire [8,10] to semi-insulating GaAs [11], low temperature-grown (In)GaAs [12,13] and ionimplanted InP [14]. However, the main challenge of synthesizing and selecting photoconductive materials still persists.…”

Section: Introductionmentioning

confidence: 99%

Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors

Peng

Parkinson²,

et al. 2018

physics

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GaAs nanowires are promising candidates for advanced optoelectronic devices, despite their high surface recombination velocity and large surface-area-to-volume ratio, which renders them problematic for applications that require efficient charge collection and long charge-carrier lifetimes. Overcoating a bare GaAs nanowire core with an optimized larger-bandgap AlGaAs shell, followed by a capping layer of GaAs to prevent oxidation, has proven an effective way to passivate the nanowire surface and thereby improve electrical properties for enhanced device performance. However, it is difficult to quantify and distinguish the contributions between the nanowire core and cap layer when measuring the optoelectronic properties of a nanowire device. Here, we investigated the photoconductive terahertz (THz) response characteristics of single GaAs/AlGaAs/GaAs core-shell-cap nanowire detectors designed for THz time-domain spectroscopy. We present a detailed study of the contributions of the GaAs cap layer and GaAs core on the ultrafast optoelectronic performance of the detector. We show that both the GaAs cap and core contribute to the photoconductive signal in proportion to their relative volume in the nanowire. By increasing the cap volume ratio to above 90% of the total GaAs volume, a quasi-direct-sampling type photoconductive nanowire detector can be achieved that is highly desirable for low-noise and fast data acquisition detection.

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Detection of terahertz waves using low-temperature-grown InGaAs with 1.56μm pulse excitation

Cited by 62 publications

References 14 publications

Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices

Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices

Development of Terahertz Pulse Wave Diagnostics for a Magnetized Fusion Plasma Reactor

Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors

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