In this article has been investigated the isothermal annealing of irradiated by the flow of electrons Ω=5•1015 el./cm2, with the energy of 10 MeV, of single crystals n-Ge. Coefficients of the magnetic sensitivity for irradiated single crystals n-Ge before and after annealing at different temperatures were also determined. The abnormal annealing at the temperature of 403 K has been revealed. Hall constant was being increased during this process and the maximal magnetic sensitivity was being achieved correspondingly. Such abnormal annealing can be used as a tool to create highly sensitive Hall sensors on the basis of the irradiated n-Ge.