2015
DOI: 10.1016/j.mssp.2015.02.017
|View full text |Cite
|
Sign up to set email alerts
|

Detection of zinc blende phase by the pulsed laser photoacoustic technique in ZnO thin films deposited via pulsed laser deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
2
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 46 publications
1
2
0
Order By: Relevance
“…It is pertinent to note the existence of a noticeable lack of both theoretical and empirical results pertaining to the ternary and quaternary alloys under consideration, with the exception of theoretical data pertaining to the ternary alloy Mg 0.5 Zn 0.5 O [34]. In contrast, our findings of binary compounds ZnO, BeO, and MgO exhibit a noteworthy agreement with the results of previous theoretical and experimental investigations documented in the scientific literature [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48].…”
Section: Structural Propertiessupporting
confidence: 87%
“…It is pertinent to note the existence of a noticeable lack of both theoretical and empirical results pertaining to the ternary and quaternary alloys under consideration, with the exception of theoretical data pertaining to the ternary alloy Mg 0.5 Zn 0.5 O [34]. In contrast, our findings of binary compounds ZnO, BeO, and MgO exhibit a noteworthy agreement with the results of previous theoretical and experimental investigations documented in the scientific literature [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48].…”
Section: Structural Propertiessupporting
confidence: 87%
“…[1][2][3][4] ZnO film can be obtained by many film growth methods such as magnetron sputtering, solution based method, atomic layer deposition (ALD), chemical vapor deposition (CVD), pulse laser deposition (PLD) and molecular beam epitaxy (MBE). [5][6][7][8][9][10] Among these methods, ALD is highlighted for the precise control of film growth at the atomic layer scale and hence high-quality film can be obtained. However, conventional thermal ALD suffers from low growth rate due to the periodic longtime purge steps for temporally separating the precursors to ensure the surface-limiting reaction, which makes it less attractive for industrial manufacturing.…”
mentioning
confidence: 99%
“…The attractive characteristics of PLD in the synthesis of multicomponent thin-film materials make it the perfect technique for a lot of applications [23,24]. In some cases, it could be the synthesis of a thin-film material or structure [25].…”
Section: Introductionmentioning
confidence: 99%