“…The first time JPL passivated a CCD using MBE, the passivation layer comprised 5 nm of silicon doped at 3 × 10 20 B/cm −3 , i.e ., 3-D doping, plus a sacrificial 1-nm un-doped silicon cap layer to form the surface oxide [ 29 ]. In all subsequent devices, JPL has used 2D doping for surface passivation [ 17 , 18 , 28 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 ]. During MBE growth, a thin layer of un-doped silicon is grown on the substrate to form an atomically clean, uniform silicon surface.…”