Deterioration of near-UV GaN-based LEDs in seawater vapour

Chen, Yi Tai; Lin, Bo Hong; Lu, Ssu Han; Li, Zi Wei; Tsai, Yu Sheng; Sun, Tai; Wu, Yu Mao; Chen, Hsiang

doi:10.1016/j.rinp.2020.103432

Cited by 8 publications

(1 citation statement)

References 22 publications

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“…In general, to evaluate the reliability and predict the lifetime of GaN‐based LEDs, highly accelerated aging tests of LEDs have often been carried out under different stress conditions, including electrical, [ 21–25 ] temperature, [ 26–29 ] moisture, [ 30,31 ] and electrostatic discharge overstress. [ 32–37 ] In addition, different from microelectronic devices where catastrophic failures normally happen during the stress, GaN‐based LEDs degrade gradually until their optoelectronic performance cannot meet the requirement.…”

Section: Multifunctional In Situ Accelerated Aging Testsmentioning

confidence: 99%

Progress of Reliability and Failure Mechanisms for GaN‐Based Light‐Emitting Diodes

Zhao

Liu

2022

Physica Status Solidi (a)

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To achieve high reliable GaN-based LEDs with a controllable lifetime is one of the key issues for applications. In this review, an overview of reliability studies for different GaN-based LEDs, especially the research progress in our group based on our specially designed in situ multifunctional highly accelerated aging test system over the past few years, is presented. The contents not only cover highpower GaN-based LEDs, mid-power GaN-based LEDs, deep UV GaN-based LEDs, micro-LEDs, and phosphors under different operating conditions but also include the influence of point defects on the degradation, the correlation between luminous flux and color quality, and so on. Finally, prospects for reliability are discussed with the further development of the GaN-based devices.

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