Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction

Nagy, A.; Bogáncs, J.; Gyulai, J.; Csőke, A.; Nazarov, V. M.; Seres, Z.; Szabó, Árpád; Yazvitsky, Yu. S.

doi:10.1007/bf02520179

Cited by 13 publications

(2 citation statements)

References 4 publications

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“…Neutron depth profiling is well suited for measurements across interfacial boundaries. Kvitek et al [ 27 ] and others [ 20 , 21 , 28 , 34 ] have studied profiles of boron implanted and diffused across the interfacial region of Si/SiO 2 . Other NDP experiments [ 48 , 49 ] have been described for interfaces of silicon, silicon dioxide or metal on metal, where diffusion distributions and segregation coefficients were studied.…”

Section: Applicationsmentioning

confidence: 99%

Neutron depth profiling: Overview and description of NIST facilities

Downing

Lamaze

Langland

et al. 1993

J. RES. NATL. INST. STAN.

126

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The Cold Neutron Depth Profiling (CNDP) instrument at the NIST Cold Neutron Research Facility (CNRF) is now operational. The neutron beam originates from a 16 L D2O ice cold source and passes through a filter of 135 mm of single crystal sapphire. The neutron energy spectrum may be described by a 65 K Maxwellian distribution. The sample chamber configuration allows for remote controlled scanning of 150 × 150 mm sample areas including the varying of both sample and detector angle. The improved sensitivity over the current thermal depth profiling instrument has permitted the first nondestructive measurements of 17O profiles. This paper describes the CNDP instrument, illustrates the neutron depth profiling (NDP) technique with examples, and gives a separate bibliography of NDP publications.

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Section: Applicationsmentioning

confidence: 99%

Neutron depth profiling: Overview and description of NIST facilities

Downing

Lamaze

Langland

et al. 1993

J. RES. NATL. INST. STAN.

126

View full text Add to dashboard Cite

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“…The applied analytical procedure is based on the nuclear reaction 1°B/n, a/'Li. The details of the method used and comparison with other techniques like electric resistance measurements were described in previous works [3] and [5]. The sample is placed into a thermal neutron beam and during the irradiation time the number of a-particles released in the nuclear reaction as well as their energy losses are measured.…”

Section: Methodsmentioning

confidence: 99%

Variation of boron concentration in metallic glass ribbons

Nagy

Vasvari

Duwez

et al. 1980

Phys. Stat. Sol. (a)

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a), B. VASV~RI (a), P. DUWEZ (b), L. BAROS (a), J. B O G~N C S (c), and V. M. NAZAROV (c) Dedicated to Prof. Dr. Dr. h.c. Dr. E.h. P. GORLICH on the occasion of his 75th birthdayThe boron concentration of Fe4,Ni,,P14B,, Fe3,Ni,,Crl,Pl,B, and Fe4,Ni,B,, metallic glasses is measured by neutron activation analysis on both surfaces of the ribbon samples. It is found that the boron concentration is always higher on the bright side of the ribbon than that on the dull side which is in contact with the cold surface of the wheel during the rapid quenching from the melt.A possible explanation is given in terms of the solid-liquid interface moving rapidly from the cooled surface to the free surface when preparing the samples. rIOBepXHOCTHacI HOHueHTpaUHfi 6opa Ha o 6 e~x CTOpOHaX JIeHT MeTaJIJIkIWCHOrO CTeKJIa TpOHHOrO aKTEIBauH0AHOrO aHaJIM3a. YCTaHOBJIeHO, 9TO Ha 6nec~mqeZi CTOpOHe KOH-BpaqaIOlq&iMCfi EHCHOM. no BC& BepOfiTHOCTH3TO IIBJIeHHe MOHCHO 06' bfiCHHTb 6bICTPbIM CocTaBa Fe4,Ni4,Pl4B,, Fe32Ni36Cr,4P12B6 H FeMNi,B2, onpenenfinacb MeTOAOM HeBuempaum dopa Bceraa Bmue, qeM Ha MaToBoB, conpmacamweficx c oxnawnembm cMeqemeM 4aao~oB rpaHaubI TBepnafi-manKafi 4a3a OT oxaamnemofi IIOBepXHOCTH n p~ ~IJCTPOM oxnamneHnn pacnnasa B npouecce n p o~3 s o n c~s a B HanpasneHm CBO-60n~oB IlOBepXHOCTH.

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