Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance

Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields

“…2 Theoretical energies of the beating pattern due to presence of a number of le-lhh and le-llh transitions (solid oscillations with different frequencies corresponding to lines) versus Q, for samples (a) A the different fields as well as to transitions originating and (b) B. The dotted lines are the from the light-and heavy-hole valence bands experimental energies, error bars are [12,13,15,16]. shaded regions.…”

“…3(a) into its individual field contributions the FFT method was employed [12,13]. We first transformed the x-axis variable from E to (E -Eg) 3 " 2 and multiplied the spectrum by E 2 (E-Eg) in order to account for the inherent decay of the FKO [see Eq.…”

“…Comparison between the experimental energies of le-lhh/le-llh and a theoretical envelope function calculation (including the effect of strain) [10,11] made it possible to evaluate the conduction band offset parameters Q, = 0.34+0.03 and 0.57+0.03 for x = 0.53 and 0.75, respectively. The InP related FKO beat patterns were analyzed by a fast Fourier transform (FFT) method [12,13]. It was found that the FKO spectra were due to the simultaneous contribution of at least three different fields (106 kV/cm, 36 kV/cm, and 23 kV/cm), which originate in the various interfaces, i.e., substrate/buffer, cap layer/surface, and buffer/QW structure.…”

Бесконтактная Характеризация Дельта-Слоев Марганца И Углерода В Арсениде Галлия

“…Однако в слу-чае наложения сигналов ФО от поверхности и от δ-слоя существует необходимость разделения этих сигналов для индивидуального анализа каждого из них. Для разде-ления можно применить методику фазочувствительного фотоотражения, предложенную в [9] и активно исполь-зуемую в более поздних работах [14][15][16][17]. Эта методика позволяет выделять искомую составляющую сигнала, обусловленную исследуемым δ-слоем, и не учитывать вклад приповерхностной области полупроводника.…”

A study of Franz–Keldysh oscillations in the photo reflectance spectrum of the δ-doped GaAs film

“…This mass was then compared with the reduced mass of the electron and heavy and light holes to determine the relative contributions of the heavy-and light-hole transitions. Alternatively, we have developed a method, which takes the fast Fourier transform ͑FFT͒ of the PR spectrum, 7,8 to separate the contributions of the heavy and light hole transitions and obtained results for E 0 to compare with that of conventional FKOs fittings at E 0 ϩ⌬ 0 .…”