Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

Tsybulenko, V. V.; str., Zavodska; Shutov, S. V.; Yerochin, S. Yu.

doi:10.15407/spqeo23.03.294

Cited by 2 publications

(4 citation statements)

References 15 publications

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“…Тож актуальним є нанесення контактної сітки з рідинної фази. Одним із різновидів рідиннофазо-вого осадження є метод СРФЕ, докладно описаний у роботах [6,7]. Однією з його особливостей є можливість сегментарно отримати епітаксійні плівки на поверхні напівпровідникової пластини.…”

Section: вступunclassified

“…У методі СРФЕ змочування напівпровідникової пластини розчином-розплавом і її очищення може здійснюватися за допомогою сили Ампера. Розрахунок відповідних технологічних режимів наведено в [6]. Проте в нашому випадку між напівпровідниковою пластиною та розчином-розплавом знаходиться маска з досить вузькими щілинами.…”

Section: теоріяunclassified

“…Нехай розчин-розплав не змочує стінки щілини маски повністю. Тоді запишемо силу Ампера, необхідну для змочування пластини крізь маску, з урахуванням [6]: , , -густина розчину-розплаву, олова й алюмінію відповідно, кг/м 3 ; хмольна частка алюмінію [11,12], Wширина щілини, м.…”

Section: теоріяunclassified

“…Відомо, що типовий час термообробки після нанесення алюмінію на кремній для омічних контактів складає понад 5 хв за температури близько 550 °С. Для зазначеного контакту розчину-розплаву з пластиною для нашої структури проведено розрахунок теплопередачі згідно з [6].…”

Section: теоріяunclassified

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DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Tsybulenko¹,

Shutov²,

Boskin³

2021

KPI SN

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Background. Single- and multi-layer metal films are widely utilized in modern electronics and optoelectronics as ohmic contacts. As a rule, the films are deposited by thermal evaporation, ion sputtering and chemical vapour deposition. However the methods of deposition from a liquid phase are the most simple and cost-effective. Thus the ohmic contact deposition by these methods is still an actual problem. Objective. The purpose of the paper is to study the possibility of deposition of multi-layer ohmic metal films over a semiconductor wafer surface from a liquid phase, particularly by scanning liquid phase epitaxy technique. Methods. In this work we considered the influence of a long-term temperature gradient at the interface metallic solution-melt – semiconductor wafer on the possibility of deposition of multi-layer ohmic metal films on the semiconductor wafer surface during segmental contact between the solution-melt and the wafer. For this purpose we carried out the simulation of heat transport process, wafer wetting process as well as the process of wafer cleansing off the solution-melt taking into account capillary phenomena in the mask openings using the method of scanning liquid phase epitaxy. For experimental confirmation of adequacy of the model proposed we carried out the deposition of Al/SnAl layer on silicon wafer in the above mentioned conditions. Results. We have deposited the contact layer Al/SnAl on the surface of silicon wafer from Al-Sn solution-melt by scanning liquid phase epitaxy technique using supplementary heater for the wafer and mask installed in the apparatus. The contact layer is made as three identical pads located at different distance one from each other. By the analysis of current-voltage characteristic we determined that the metallic film contact with the semiconductor is a non-rectifying, i.e. ohmic contact. The specific contact resistance was determined by the Transmission Line Method using linear configuration of the contact pads (LTLM). Its value was 7.2∙10-4 Ohm·cm2. Conclusions. The principal possibility of obtaining of multi-layer ohmic contacts to the semiconductor by scanning liquid phase epitaxy technique in conditions of segmental contact between the solution-melt and the wafer as well as long-term gradient at the contact interface was shown. The conditions were realized by using extra heating of the wafer back side and the high-temperature mask through which the solution-melt contacted the wafer.

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Section: вступunclassified

Section: теоріяunclassified

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DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Tsybulenko¹,

Shutov²,

Boskin³

2021

KPI SN

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Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

Tsybulenko

Shutov

2020

ТКЭА

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Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy, metal-organic chemical vapor deposition and molecular-beam epitaxy. However, the methods of deposition from a liquid phase are the most inexpensive and simple yet. Thus obtaining the above mentioned heterostructures from a liquid phase is still promising. In this work we demonstrated the possibility of using the method of scanning liquid phase epitaxy to grow continuous heteroepitaxial layers over the substrate surface highly mismatched by lattice constant and having different crystal-chemical properties. By controlling basic parameters of the method we created the conditions close to the solution-melt saturation limit. In other words, we created the conditions of ultra-fast solution-melt cooling and, respectively, high growth rate. We obtained the heterostructures of Ge layers grown on GaP substrates where the lattice mismatch made 3.7%. Gallium was used as the solvent for Germanium. The heterostructure was grown by the method of scanning liquid phase epitaxy in the conditions of ultra-fast initial cooling of the solution-melt. Overcooling at the crystallization front was controlled by an extra heater of the substrate back side. The growing time was 1 and 20 seconds for the two test samples. The layers thickness was determined by the spherical slice technique to be 1.2 and 1.5 μm for these two growing time values, accordingly. We showed that it was possible to obtain more perfect Ge layers on GaP substrate by lowering the growth rate in the final growth stage. This method can be used to grow heterostructures used in creating such modern electronic and optoelectronic devices as structures based on А3В5 compounds and their solid solutions, which cannot be obtained by other classical methods of liquid phase epitaxy due to significant differences in lattice constants and / or crystal-chemical properties.

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Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

Cited by 2 publications

References 15 publications

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

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