Determination of current transport and trap states density in AlInGaN/GaN heterostructures

Arslan, Engin; Ural, Sertaç; Altındal, Ş.; Özbay, Ekmel

doi:10.1016/j.microrel.2019.113517

Cited by 15 publications

(3 citation statements)

References 32 publications

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“…Based on the Shockley–Read–Hall theory, the locations of the energy change, the test frequency, and the interface state density have a relatively definite relationship normalΔ E = ( E C − E T ) = k normalB T q 0.25em ln ( σ v D dos 2 π f ) where E T is the interface trap energy level, E C is the majority carrier conduction band edge, k B is the Boltzmann constant, T is the temperature, and f is the frequency. σ is the trap interface area, v is the carrier thermal rate, D dos is the major carrier energy band density of states, and InP corresponds to values of 8.50 × 10 –17 cm 2 , 4.16 × 10 7 cm/s, and 5.56 × 10 23 cm –3 …”

Section: Resultsmentioning

confidence: 99%

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Lü

Wang

et al. 2023

ACS Appl. Electron. Mater.

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In this work, the effects of the atomic-layer deposition (ALD)-derived Al2O3 passivation layer with different growth cycles on the interfacial chemistry and electrical performance of sputtering-driven ErSmO/InP metal oxide semiconductor (MOS) capacitors have been comparatively investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) characterization have confirmed that the ALD-driven Al2O3 passivation layer with 20 growth cycles could form a flat dielectric layer and effectively suppress the diffusion of In and P elements at the InP interface. Meanwhile, the ErSmO/Al2O3/InP gate stack with 20 growth cycles exhibited optimal electrical properties, including a large dielectric constant of 37.42, a minimum interface state density (D it) of 5.43 × 1011 eV–1 cm–2, and a low leakage current of 3.95 × 10–6 A/cm–2. The leakage current conduction mechanisms of InP-MOS capacitors measured at room temperature and low temperature have also been systematically analyzed. Particularly, low-frequency noise (LFN) is used to evaluate trap levels in InP-MOS capacitors. All experimental results have demonstrated that the ErSmO/Al2O3/InP gate stack has potential applications in future ultrahigh-speed and high-frequency microelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Lü

Wang

et al. 2023

ACS Appl. Electron. Mater.

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“…Where the value of E T could be obtained from the frequencies in (G P /ω) max . Using the above formula to calculate D it , with correspondence to ∆E [27].…”

Section: Electrical Characteristics Analysismentioning

confidence: 99%

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

et al. 2023

Nanomaterials

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In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectroscopy (XPS) analyses have showed that the ALD-derived Al2O3 passivation layer remarkably prevents the formation of the low-k hydroxides generated by moisture absorption of the gate oxide and greatly optimizes the gate dielectric properties. Electrical performance measurements of metal oxide semiconductor (MOS) capacitors with different gate stack order have revealed that the lowest leakage current density of 4.57 × 10−9 A/cm2 and the smallest interfacial density of states (Dit) of 2.38 × 1012 cm−2 eV−1 have been achieved in the Al2O3/Er2O3/Si MOS capacitor, which can be attributed to the optimized interface chemistry. Further electrical measurements of annealed Al2O3/Er2O3/Si gate stacks at 450 °C have demonstrated superior dielectric properties with a leakage current density of 1.38 × 10−9 A/cm2. At the same, the leakage current conduction mechanism of MOS devices under various stack structures is systematically investigated.

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“…The reaction of the Schottky structure to the applied bias voltage, temperature, frequency, and intensity of light has a direct effect on certain optoelectronic devices. The performance of MS and MIS devices can be optimized by various factors, such as the choice of metal and semiconductor with acceptable work functions, appropriate doping (donor/acceptor atoms) level, interface layer, and its homogeneity and thickness, low density of N ss , low series resistance (R s ), and homogeneity of BH [7,8]. Furthermore, the optical behavior and photoresponse of a diode can be improved by changing the interface layer.…”

Section: Introductionmentioning

confidence: 99%

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Arslan

Badalı

Altındal

et al. 2020

J Mater Sci: Mater Electron

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The current-voltage (I-V) and capacitance-voltage (C-V) behaviors of the (Au/Ni)/HfAlO 3 /n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)-V curves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (Φ B0 ) were extracted using the slope and intercept of the ln(I)-V curve before and after the intersection point based on lighting power. Although the Φ B0 values decrease with increasing light power, n increases for two regions, and there is a strong linear relationship between them. The values of photo-current (I ph ) increase with the increasing lighting power due to the formation of electron-hole pairs. The slope of the double-logarithmic I ph -P was changed from 0.422 to 0.852, respectively, at − 2 V and − 9 V, which indicates the ongoing distribution of N ss . In addition, the profile of surface states (N ss ) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. The N ss -V curve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution of N ss and their restructuring and reordering under the effects of lighting and an electric field.

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Determination of current transport and trap states density in AlInGaN/GaN heterostructures

Cited by 15 publications

References 32 publications

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

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Determination of current transport and trap states density in AlInGaN/GaN heterostructures

Cited by 15 publications

References 32 publications

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

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Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers