1971
DOI: 10.1007/bf00817972
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Determination of diffusion and activity coefficients in the gallium-indium system by the contact-melting method

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1991
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Cited by 6 publications
(2 citation statements)
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“…The temperature of the thermostat was controlled to an accuracy of ±0.2 K. In the process of diffusion anneal ing, the growth of the thickness of the liquid interlayer was controlled through a viewing window of the ther mostat with the help of an MBS 10 microscope. The known law of diffusion growth [6], according to which the extension of the phase grows proportionally to the square root of the time, was confirmed. After the com pletion of the diffusion annealing, the liquid interlayer was crystallized by quenching in water.…”
Section: Methodsmentioning
confidence: 79%
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“…The temperature of the thermostat was controlled to an accuracy of ±0.2 K. In the process of diffusion anneal ing, the growth of the thickness of the liquid interlayer was controlled through a viewing window of the ther mostat with the help of an MBS 10 microscope. The known law of diffusion growth [6], according to which the extension of the phase grows proportionally to the square root of the time, was confirmed. After the com pletion of the diffusion annealing, the liquid interlayer was crystallized by quenching in water.…”
Section: Methodsmentioning
confidence: 79%
“…1a. The contact melting was implemented in a nonsta tionary diffusion regime at the temperature Т 0 = 400 K using the procedure described in [6]. In the phase diagram, the isotherm corresponding to the temper ature of the investigation Т 0 intersects the regions of the In based solid solution (denoted as (In)), β phase, liquid phase L, γ phase, and Sn based solid solution (denoted as (Sn)).…”
Section: Methodsmentioning
confidence: 99%