Determination of electronic band structure of quaternary ferromagnetic Ga0.97-Mn0.03CryAs epitaxial layers

Donmez, Omer; Güneş, Mustafa; Henini, M.; Erol, Ayşe

doi:10.1016/j.physb.2023.415074

Cited by 3 publications

(2 citation statements)

References 40 publications

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“…It is worth noting that the experimental error is relatively high because the optical transitions in R measurement contain additional optical transition energies [45][46][47], as seen in figures 1-3.…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Hassanien,

Darwish,

Kamal

2024

Phys. Scr.

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The spectroscopic and electronic properties of small-molecular organic semiconductors in thin films are a significant aspect that controls the performance of their optical/optoelectronic devices. A heterojunction of thermal vacuum deposited film of tin(II)2,3-naphthalocyanine (SnNC) dye onto a p-type Si wafer (SnNC/p-Si) was fabricated. The morphology of SnNC thin film onto Si wafer was explored using the Field Emission Scanning Electron Microscope (FE-SEM). The specular reflectance and the fluorescent properties of SnNC thin film onto Si wafer were investigated. The PL emission spectra of SnNC/p-Si emission bands are related to the B and Q absorption bands for SnNC. The spectral behavior of the refractive index and the specific polarizability for both SnNC/Glass and SnNC/p-Si were extracted. Under varying temperatures (298–378 K), the electronic properties of the SnNC/p-Si heterojunction were analyzed in dark conditions. The diode parameters of SnNC/p-Si heterojunctions were extracted from the current-voltage (I-V) procedure, which exhibited temperature-dependent behavior. According to the Cheung-Cheung and Norde procedure, the essential electrical diode parameters of the SnNC/p-Si device such as the ideality factor, the series resistance, and barrier height were estimated. The photoconductivity parameters such as the photocurrent, the sensitivity, and the responsivity of the SnNC/p-Si devices were estimated. We believe that these findings can be useful and utilized in optoelectronic and organic electronic applications.

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Section: Resultsmentioning

confidence: 99%

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Hassanien,

Darwish,

Kamal

2024

Phys. Scr.

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“…During the last couple of years, much research in the nearinfrared (NIR), mid-infrared (MIR), and far-infrared (FIR) regions of the electromagnetic spectrum has been focused on revealing the potential of novel promising semiconductor materials and semiconductor devices [1][2][3][4][5][6][7]. Undoubtedly, the emergence of the so-called highly mismatched alloys (HMAs) has accelerated the studies conducted for semiconductor-based applications in the infrared (IR) region [1].…”

Section: Introductionmentioning

confidence: 99%

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Aydin,

Yilmaz,

Bork

et al. 2024

Appl. Phys. A

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The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.

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Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

Aydin,

Bork,

Zide

et al. 2024

Physica B: Condensed Matter

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Determination of electronic band structure of quaternary ferromagnetic Ga0.97-Mn0.03CryAs epitaxial layers

Cited by 3 publications

References 40 publications

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

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