Determination of facet orientations on alkaline etched multicrystalline wafers

Hylton, J.D.; Burgers, A.R.; Kinderman, R.; Sinke, W.C.

doi:10.1109/pvsc.1996.564233

Cited by 4 publications

(1 citation statement)

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“…Determination of facet orientations.-Scatter measurements are used in combination with Laue photography 6 to determine the orientations of the exposed etch facets in terms of their Miller indexes. There are parallels between the Laue and scatter methods.…”

Section: Atomic Force Microscopy (Afm)mentioning

confidence: 99%

Alkaline Etching for Reflectance Reduction in Multicrystalline Silicon Solar Cells

Hylton

Burgers

Sinke

2004

J. Electrochem. Soc.

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The reflection reducing properties of alkaline-etched multicrystalline wafers are investigated experimentally for high concentration saw-damage etching and low concentration texture etching. Saw-damage etch textures are too flat for multiple bounce reflectance in air, with only 1.6% of the multicrystalline wafer surface calculated to have facet tilt angles above 45°whereby double-bounce reflectance is guaranteed. Texture etching yields 3% lower reflectance in air, due to high angled ͑up to 54.7°͒ pyramidal structures on near ͑100͒ orientations, whereby 13% of the multicrystalline etch surface has tilt angles above 45°. However, under encapsulation, light is coupled more effectively into the silicon; reflectances for the saw-damage and texture-etched wafers compare only 7 and 5.5% higher, respectively, than upright pyramid textures on monocrystalline silicon͑100͒, compared to 18 and 15% higher in air. This is because a far larger proportion of the multicrystalline wafer ͑around 40% for the two etches͒ has tilt angles above 20.9°whereby escaping light is totally internally reflected at the glass-air interface. For texture etching, not only ͕111͖ planes are stable to etching but the whole range of ͕XXY͖ crystallographic planes between these and ͕110͖ orientations, contrary to the accepted texture etching theory.

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Section: Atomic Force Microscopy (Afm)mentioning

confidence: 99%