Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

Yina, Z.; Akkerman, Z. L.; Smith, W.A.; Gat, R.

doi:10.1557/proc-441-653

Cited by 7 publications

(11 citation statements)

References 4 publications

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“…In the particular case of a transparent thin film deposited on a substrate, Yin et al [16] have considered that spectral luminance of the film/substrate system is essentially the radiation transmitted by the substrate through the transparent film:…”

Section: Theory and Methodologymentioning

confidence: 99%

“…When a film is transparent to the emitted radiation the determination of the true temperature of a film/substrate system is sometime complicated by oscillations due to interference effects originating from multireflections at the interfaces [15]. Interestingly, pyrometric interferometry was used in a microwave plasma-assisted CVD process for in situ control of the growth rate of diamond thin film, which is transparent to the radiation detected by the pyrometer [16,17]. This method was also used during MBE growth of partially opaque layers of III-V semiconductors [18] and device heterostructures [19].…”

Section: Introductionmentioning

confidence: 99%

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Diagnostic in TCOs CVD processes by IR pyrometry

Maury¹,

Duminica²

2007

Thin Solid Films

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. AbstractInfra red pyrometry is a sensitive, simple and low-cost technique commonly used for the measurement of the deposition temperature in CVD processes. We demonstrate in this work that this optical technique can be used as diagnostic tool to provide fruitful informations during the growth under atmospheric pressure of TiO 2 films on various substrates chosen as an example of transparent oxide. Significant variations of the pyrometric signal were observed during the deposition of TiO 2 thin films due to interferences in the growing film resulting from multi-reflections at the interfaces and scattering induced by the surface roughness. Modeling of the time dependence of the IR pyrometric signal allows simultaneously the determination of the layer thickness, the growth rate, surface roughness and refractive index of the thin films under the growth conditions. This diagnostic technique can be used for various transparent thin films grown on opaque substrates and is well adapted to control CVD processes operating either under atmospheric or low pressure and more generally any thermal treatment processes.

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Section: Theory and Methodologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diagnostic in TCOs CVD processes by IR pyrometry

Maury¹,

Duminica²

2007

Thin Solid Films

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“…By comparing Equations 3 and 4, the product T film k,d,r e sub k,T can be considered as an effective emissivity of the film/substrate system, in agreement with a previous report. [12] For a fixed wavelength, and neglecting the influence of the roughness (supported by the fact that we observe the early stages of the growth on a very smooth surface, and very thin layers have a mirror-like surface morphology), the radiation intensity of the film/substrate system can be given as function of the absorption coefficient of the film a as shown in Equation 5.…”

Section: Theory and Methodologymentioning

confidence: 98%

“…Interestingly, pyrometric interferometry (PI) was used for in-situ control of the growth rate of diamond thin film, which is transparent to the radiation detected by the pyrometer. [12] From the use of this technique, fruitful information on the nucleation mechanism of diamond was also obtained. [13] Consequently, in-situ pyrometry is one of the techniques used to monitor the growth of diamond films by CVD, [14] as well as that of partially transparent layers such as compound semiconductors, [15] and device heterostructures.…”

Section: Introductionmentioning

confidence: 99%

In‐Situ Optical Pyrometry in the CVD of Metallic Thin Films for Real Time Control of the Growth

Gasqueres

Maury²,

Ossola³

2003

Chemical Vapor Deposition

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In-situ temperature measurement is essential in CVD in order to control the temperature of the growing films. This is frequently achieved by optical pyrometry because it is a sensitive, convenient, and inexpensive technique that can be used in corrosive atmospheres. In this work, in-situ IR pyrometry has been used, not for direct measurement of the temperature, but for real time monitoring of the early stages of the growth of metallic-type thin films, selected as a model system. Significant variations in the pyrometric signal were observed during the metal±organic (MO) CVD of CrC x N y thin films due to changes of emissivity of the film/substrate system. The pyrometric signal (or emissivity) depends predominantly on the nature, thickness, and surface roughness of the growing film. As a result, fruitful information as to the formation of an interphase, or the existence of an induction period, can be obtained in real time by this detection technique. Radiation pyrometry can be used as a surface diagnostic tool for the growth of a large variety of thin film materials that exhibit an emissivity sufficiently different from that of the substrate.

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“…The great sensitivity of the optical pyrometry makes possible to detect the dynamics of surface phenomena during the growth of thin layers with the advantage of a particularly simple and low cost technique, working under the specific ambient of CVD processes under atmospheric pressure since low pressures are not necessary for this analysis. The IR pyrometry was used for example to study the germination of diamond [6] and to determine the growth rate in a microwaves plasma process [7][8][9]. It was also used during the MBE growth of partially opaque layers of III-V semiconductors [10,11].…”

Section: Introductionmentioning

confidence: 99%

Diagnostic in CVD processes by IR pyrometry

Gasqueres

Duminica

Maury

2008

Chemical Engineering and Processing: Process Intensification

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International audienceThe control of CVD processes requires in situ analysis techniques and real time monitoring to identify the chemical species involved in the mechanism, to determine the growth kinetics and more generally to detect and analyze the dynamics of any event occurring during the growth of the film. We demonstrate through four representative examples that IR pyrometry allows to answer to the last two items, which make it an attractive diagnostic tool for CVD processes, simple to use, sensitive at nanometric scale, economic and being able to operate either under atmospheric or low pressure. Thus, we monitored the initial stages of the growth of conducting diffusion barriers CrCxNy on Si and as a second example, we have followed their heat treatment to detect possible phase transformations. The case of MOCVD of Fe reveals the high sensitivity of this diagnostic technique. Indeed, the abrupt changes of the pyrometric signal correlate remarkably to changes in the growth mode. Lastly, the characteristic oscillations due to multireflexions at the interfaces observed in the first stages of the growth of transparent TiO2 film allow the real time determination of the growth rate. These examples show the great diagnostic potentialities of IR pyrometry for the optimization and the control of CVD processes

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Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

Cited by 7 publications

References 4 publications

Diagnostic in TCOs CVD processes by IR pyrometry

Diagnostic in TCOs CVD processes by IR pyrometry

In‐Situ Optical Pyrometry in the CVD of Metallic Thin Films for Real Time Control of the Growth

Diagnostic in CVD processes by IR pyrometry

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