Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis

Podsiadło, S.; Szyszko, T.; Warso, Grzegorz; Turos, A.; Ratajczak, R.; Kowalczyk, A.; Gȩbicki, W.; Strzałkowski, I.; Grambole, D.; Hermann, Folker

doi:10.1016/s0042-207x(02)00644-9

Cited by 4 publications

(2 citation statements)

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“…It is known that heavy Mn doping (Ͼ3 -5ϫ10 19 cm Ϫ3 ) leads to a downshift of the Fermi level and promotes the formation of compensating defect complexes 21 ͑e.g. Mn-H 22 and Mn-V N ), i.e., doping-driven self-compensation mechanisms similar to conventional Mg doping in GaN. 23 Although theoretical calculations of energies for Mn-related complexes are not available yet, our results indicate that these complexes form deep donor levels, probably with a strong phonon coupling.…”

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confidence: 60%

Doping-level-dependent optical properties of GaN:Mn

Gelhausen

Malguth

Phillips

et al. 2004

Applied Physics Letters

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The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5-23ϫ10 19 cm Ϫ3) were studied by cathodoluminescence ͑CL͒ and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at 1.414 Ϯ0.002 eV, which was attributed to an internal 5 T 2 → 5 E transition of the neutral Mn 3ϩ state. The intensity of this Mn-related transmission peak was found to scale with the Mn 3ϩ concentration. The CL measurements showed that Mn-doping concentrations around 10 20 cm Ϫ3 reduced the near band edge emission intensity by around one order of magnitude. A complete quenching of the donoracceptor-pair band at 3.27 eV and strong decrease of the yellow luminescence centered at 2.2 eV were attributed to a reduced concentration of V Ga. In the infrared spectral range of 0.8-1.4 eV three broad, Mn-doping related CL emission bands centered at 1.01Ϯ0.02, 1.09Ϯ0.02, and 1.25 Ϯ0.03 eV were observed. Their origin is attributed to deep donor complexes, which are generated as a result of the heavy Mn-doping.

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mentioning

confidence: 60%

Doping-level-dependent optical properties of GaN:Mn

Gelhausen

Malguth

Phillips

et al. 2004

Applied Physics Letters

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“…Heavy Mn-doping (>3-5 x 10 19 cm -3 ) leads to a downshift of the Fermi-level and promotes the formation of compensating donor-like defect complexes [21] (e.g. Mn-H [22] and Mn-V N ), i.e. doping-driven self-compensation mechanisms similar to conventional Mg doping in GaN [23].…”

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confidence: 99%

Optical Properties of Mn-doped GaN

et al. 2003

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Molecular beam epitaxy-grown GaN with different Mn concentrations (5-23 x 1019 cm -3 ) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/-0.002 eV was observed. This peak was attributed to an internal 5 T 2 5 E transition of the deep neutral Mn 3+ state since its intensity scaled with the Mn 3+ concentration. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of V Ga . In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.

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