Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

Boulkroun, K; Ouennoughi, Z.; Bouziane, Amal; Bougdira, J.; Elbouabdellati, M.

doi:10.1016/0921-5107(94)90096-5

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Introduction2

Conductance Methods Using G Ps /ω-ω Curves1

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Cited by 2 publications

(3 citation statements)

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“…Downscaling of dielectric layers required for novel technologies, introduces several effects causing the standard methods to be not enough efficient. The issue of the use of these methods has been discussed in several works [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Modification of the Terman method for determination of interface states in metal–insulator–semiconductor structures

Novkovski

2017

J. Phys. Commun.

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In this work a modification of Terman method for determination of interfacial energy states located in the forbidden energy gap of the semiconductor (interface states) convenient for application in metal-high-κ -Si structures is proposed and explained in details. It has been found that usually observed presence of tails in the distribution of interface states towards the band edges is an artifact due to the method of determination of interface state densities. While excluding the contribution of quantum charge in semiconductor close to the interface with dielectric, these tails in the distribution disappear. Simple efficient method for determination of total density of interface states over the silicon bandgap is proposed.

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Section: Introductionmentioning

confidence: 99%

Modification of the Terman method for determination of interface states in metal–insulator–semiconductor structures

Novkovski

2017

J. Phys. Commun.

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“…the given V g . Although the exact calculation is relatively complex, it has been demonstrated that a simplified expression can be used to calculate D it [4] D it % 2:5 qS G ps ω max ¼ 2:5 qS…”

Section: Conductance Methods Using G Ps /ω-ω Curvesmentioning

confidence: 99%

“…In [4], interface states of Au/Ta 2 O 5 /n-InP structures were determined by conductance method, Terman's method and deep-level transient spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Determination of interface states in metal(Ag,TiN,W)−Hf:Ta2O5/SiO N −Si structures by different compact methods

Novkovski

2015

Materials Science in Semiconductor Processing

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Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

Cited by 2 publications

References 9 publications

Modification of the Terman method for determination of interface states in metal–insulator–semiconductor structures

Modification of the Terman method for determination of interface states in metal–insulator–semiconductor structures

Determination of interface states in metal(Ag,TiN,W)−Hf:Ta2O5/SiO N −Si structures by different compact methods

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