Determination of junction depth and related current phenomena using laser-beam-induced current

Gluszak, E.A.; Hinckley, Steven; Eshraghian, Kamran

doi:10.1117/12.523536

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Cited by 3 publications

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“…For heterojunction photodiodes, the p-n junction needs to be in the narrow band gap material. The appearance of p-n junction in the wider band gap layer may render a blind device [5]. If nondestructive characterization could be performed to identify the poor performance device at an earlier stage in the fabrication process, significant cost savings would be expected in HgCdTe IRFPAs.…”

Section: Introductionmentioning

confidence: 98%

Dependence of laser beam induced current on geometry of the junction for HgCdTe photodiodes

Feng

Shi

et al. 2013

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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The dependence of laser beam induced current (LBIC) on the junction structure of n + -on-p HgCdTe photodiode has been numerically investigated. The simulated LBIC profiles are in good agreement with the experimental data. It is found that the peak LBIC magnitude is close to a linear relationship with both junction depth and length. In addition, the shape between two peaks becomes more flat with the increasing junction depth. A lateral and vertical current flow competition mechanism is proposed to explain the junction structure dependence of the LBIC signal.

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Section: Introductionmentioning

confidence: 98%