Determination of lifetime and surface recombination velocity in solar cells

Salagnon, J. M.; Mouhammad, Saif A.; Mialhe, P.; Pelanchon, F.

doi:10.1016/0379-6787(91)90025-k

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…Examples of the first group are measurements of the transient photoconductivity with solid contacts (e.g. [2]) or electrolytically (HF) passivated contacts [3]. The most important and technically applied contact-free techniques are:…”

Section: Introductionmentioning

confidence: 99%

Electropassivation of silicon and bulk lifetime determination with dry polymer contact

Schulenburg¹,

Tributsch²

2000

J. Phys. D: Appl. Phys.

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A new method for the determination of the bulk lifetime of minority carriers in silicon is presented. By applying a dry polymer (poly-epichlorhydrin-co-ethyleneoxide-co-allyl-glycylether with iodide/iodine) to silicon and exerting a negative potential to the silicon, an increase of the lifetime of photogenerated charge carriers (from 25 to 92 µs), measured by microwave conductivity techniques, is observed. This effect is caused by the electric field, which pulls minority carriers into the interior of the silicon wafer so that surface recombination can only continue on the back contact of the wafer. It is shown how, from this electropassivation effect, the bulk lifetime of silicon (0.81 ms in this case) and the effective diffusion constant can be obtained. Space-resolved images of minority carrier lifetimes show that it is difficult to get a homogeneous polymer-silicon contact at the whole wafer surface. Minority carrier lifetime against potential curves show that only polished silicon surfaces can be perfectly electropassivated. The procedure presented has potential for development as a technique for wafer characterization.

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Section: Introductionmentioning

confidence: 99%

Electropassivation of silicon and bulk lifetime determination with dry polymer contact

Schulenburg¹,

Tributsch²

2000

J. Phys. D: Appl. Phys.

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“…Some researchers has also reported that, due to this surface recombination, the conversion efficiency of a solar device is reduced by 4%. [39][40][41][42] As the lattice mismatch between GaAs/GaSb is very high, it may generate a high rate of recombination near the heterojunction, and may adversely affect the PV performances (i.e., a severe drop in V oc and J sc may be observed). [43] To understand this phenomena, a detailed investigation is carried out by varying the trap charge density near the interface.…”

Section: Effect Of Defect On Hetero Gaas/gasb Solar Cellmentioning

confidence: 99%

Analysis of Band Alignment Engineering and Interface Defects on a GaAs/GaSb Heterostructure Solar Cell

Sahoo

Mishra

2022

Physica Status Solidi (a)

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In photovoltaic sector, optimal utilization of the solar spectrum combined with improved power conversion efficiency is the call of the day. Such elasticity is provided by heterostructure solar cells. But it is found that with a high lattice mismatch and band discontinuities, the open‐circuit voltage (Voc) and the fill factor deteriorates handsomely. As a result, the second requirement is still unsatisfied. To address such issues, band alignment engineering is introduced in this paper. Silvaco ATLAS is used to virtually create and verify the proposed model. Herein, different recombination events and their effects on the cell's Voc are investigated in depth. Furthermore, interface trap defect is introduced to investigate its effect on the lower efficiency and Voc. However, it is found that, in GaAs/GaSb heterostructures, the reduced Voc and efficiency issues can be avoided, because the proposed model is able to achieve a lower trap density of 105 cm−2.

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“…The surface recombination (SR) has a great effect on the performance of a SC, decreasing its photocurrent and increasing dark current, particularly for small area cells. SR is reported to be the cause of an efficiency loss of 4% in SCs [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of high-efficiency GaAs PIN solar cells

et al. 2020

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Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are commercially available. However, various parameters need to be optimized to get maximum efficiency from a SC. In this study we have presented a SC model in which dependence of quantum efficiency (QE) on various parameters has been investigated. The mobility of the carriers has been varied with wide range along with the carrier life time (LT). Results show that maximum efficiencies can be achieved up to 11.10% and 10.81% keeping the electron and hole mobility to be 1500 cm 2 V -1 s -1 and 300 cm 2 V -1 s -1 respectively with electron and hole carrier LT to be 3ns and 7ns respectively. The effect of surface recombination velocity (SRV) has also been brought under observation and the maximum efficiency is found to be 13.75% at electron and hole SRV equal to be 10 3 ms -1 . Results shows that the higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

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Determination of lifetime and surface recombination velocity in solar cells

Cited by 6 publications

References 19 publications

Electropassivation of silicon and bulk lifetime determination with dry polymer contact

Electropassivation of silicon and bulk lifetime determination with dry polymer contact

Analysis of Band Alignment Engineering and Interface Defects on a GaAs/GaSb Heterostructure Solar Cell

Modeling and simulation of high-efficiency GaAs PIN solar cells

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