2006
DOI: 10.1134/s106193480605011x
|View full text |Cite
|
Sign up to set email alerts
|

Determination of low chlorine concentrations in air using semiconductor chemical sensors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
4
0

Year Published

2009
2009
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 7 publications
0
4
0
Order By: Relevance
“…For example, Wang et al [7] synthesized mesoporous SnO 2 -based sensor which was sensitive to chlorine gas at 370 ℃. In 2 O 3 sensor synthesized by Belysheva and Bogovtseva [9] showed better sensitivity to chlorine gas at 300 ℃, and CdIn 2 O 4 sensors [10] we prepared before showed faster response to chlorine gas at about 220-300 ℃. Therefore, it is necessary to improve the property of chlorine gas sensors in order to decrease the working temperature.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…For example, Wang et al [7] synthesized mesoporous SnO 2 -based sensor which was sensitive to chlorine gas at 370 ℃. In 2 O 3 sensor synthesized by Belysheva and Bogovtseva [9] showed better sensitivity to chlorine gas at 300 ℃, and CdIn 2 O 4 sensors [10] we prepared before showed faster response to chlorine gas at about 220-300 ℃. Therefore, it is necessary to improve the property of chlorine gas sensors in order to decrease the working temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Gas sensors play an important role in environmental monitoring. In recent years, some metal oxides and complex metal oxides have been reported to be used as chlorine gas sensors [3][4][5][6][7][8][9][10][11][12], but many of those sensors work at high temperature [5][6][7][8][9][10][11][12]. For example, Wang et al [7] synthesized mesoporous SnO 2 -based sensor which was sensitive to chlorine gas at 370 ℃.…”
Section: Introductionmentioning
confidence: 99%
“…This current increase is in contrast to bulk Ni film [ 34 ], where a current decrease was reported. This difference can be explained by taking into account the role of native nickel oxide (NiO on the Ni shell) [ 35 ]. It is known that a native oxide film with thickness of a few nanometers is formed on the Ni surface at room temperature [ 24 ].…”
Section: Resultsmentioning
confidence: 99%
“…NiO is a p-type semiconductor with a bandgap energy of 3.6 to 4.0 eV and has been widely utilized as a gas-sensing material with environmental stability [ 10 , 36 ]. Here, we propose that the current increase in our sensors is due to the depletion of electrons caused by the replacement of mobile surface oxygen in the native NiO region with the adsorbed Cl 2 , resulting in the increase of hole concentration [ 13 , 35 , 37 ]. A further study of the effect of intentional oxidation on the Ni-Si NWs to increase the sensitivity to Cl 2 gas will be performed in the future.…”
Section: Resultsmentioning
confidence: 99%