Determination of magneto-optical constant of Fe films with weak measurements

Qiu, Xiaodong; Zhou, Xinxing; Hu, Dejiao; Du, Jia; Gao, Fuhua; Zhang, Zhiyou; Luo, Hailu

doi:10.1063/1.4897195

Cited by 98 publications

(50 citation statements)

References 38 publications

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“…Investigation of the SHE in photon tunneling structures by Luo et al has clarified the three-dimensional nature of the photon tunneling (figure 1(e)) [99,100]. As shown by Ren et al [104] and Qiu et al [65], the SHE of light at the interface between air and magnetic films is significantly different from that at air-glass interfaces due to the complex refractive index of magnetic films. Thus, the SHE can be used as a precise and sensitive tool for determining the magnetic-optical constant of magnetic films, which has great potential in magnetic physics.…”

Section: She Of Light At Optical Interfacesmentioning

confidence: 98%

Recent advances in the spin Hall effect of light

et al. 2017

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The spin Hall effect (SHE) of light, as an analogue of the SHE in electronic systems, is a promising candidate for investigating the SHE in semiconductor spintronics/valleytronics, high-energy physics and condensed matter physics, owing to their similar topological nature in the spin-orbit interaction. The SHE of light exhibits unique potential for exploring the physical properties of nanostructures, such as determining the optical thickness, and the material properties of metallic and magnetic thin films and even atomically thin two-dimensional materials. More importantly, it opens a possible pathway for controlling the spin states of photons and developing next-generation photonic spin Hall devices as a fundamental constituent of the emerging spinoptics. In this review, based on the viewpoint of the geometric phase gradient, we give a detailed presentation of the recent advances in the SHE of light and its applications in precision metrology and future spin-based photonics.

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Section: She Of Light At Optical Interfacesmentioning

confidence: 98%

Recent advances in the spin Hall effect of light

et al. 2017

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“…The photonic SHE itself can be developed into a useful metrological tool for characterizing the structure parameter variations of different physical systems. For example, we can use the photonic SHE to probe spatial distributions of electron spin states [10], measure the thickness of nanometal film [18], identify graphene layers [19], detect the axion coupling in topological insulators [20], and determine the magneto-optical constant of Fe films [21].…”

Section: Introductionmentioning

confidence: 99%

Unveiling the photonic spin Hall effect with asymmetric spin-dependent splitting

Zhou¹,

Ling²

2016

Opt. Express

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The photonic spin Hall effect (SHE) manifests itself as the spin-dependent splitting of light beam. Usually, it shows a symmetric spin-dependent splitting, i.e., the left- and right-handed circularly polarized components are equally separated in position and intensity for linear polarization incidence. In this paper, we theoretically propose an asymmetric spin-dependent splitting at an air-glass interface under the illumination of elliptical polarization beam and experimentally demonstrate it with the weak measurement method. The left- and right-handed circularly polarized components show expectedly unequal intensity distributions and unexpectedly different spin-dependent shifts. Remarkably, the asymmetric spin-dependent splitting can be modulated by adjusting the handedness of incident polarization. The inherent physics behind this interesting phenomenon is attributed to the additional spatial Imbert-Fedorov shift. These findings offer us potential methods for developing new spin-based nanophotonic applications.

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“…The SHEL is universal to any interface and represents a remarkable failure of Fresnel's and Snell's formulas at the nanoscale. It exhibits a unique potential for applications in precision metrology, including bio-sensing [7], nanoprobing [8], and thin films and multilayer graphene characterization [9][10][11]. It has also been used to identify different absorption mechanisms in bulk semiconductors [12,13].…”

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Topological Phase Transitions in the Photonic Spin Hall Effect

Kort-Kamp

2017

Phys. Rev. Lett.

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The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, material properties, and features non-trivial topological properties. We discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carries, providing a unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.At macroscopic scales electromagnetic radiation's spatial and polarization degrees of freedom are independent quantities that can be accurately described by traditional geometric optics. A different landscape takes place in the subwavelength regime where emergent photonic spin-orbit interactions (SOI) culminate in spin-dependent changes in light's spatial properties [1,2]. A striking optical phenomena originating from SOI is the spin Hall effect of light (SHEL), which corresponds to the shift of photons with contrary chirality to opposite sides of a finite beam undergoing reflection/refraction [3][4][5][6]. The SHEL is universal to any interface and represents a remarkable failure of Fresnel's and Snell's formulas at the nanoscale. It exhibits a unique potential for applications in precision metrology, including bio-sensing [7], nanoprobing [8], and thin films and multilayer graphene characterization [9][10][11]. It has also been used to identify different absorption mechanisms in bulk semiconductors [12,13].Staggered two-dimensional semiconductors [14][15][16], including silicene [17], germanene [18], and stanene [19,20] are monolayer materials made of Silicon, Germanium, and Tin atoms, respectively, arranged in a honeycomb lattice. Unlike graphene [21], these materials are nonplanar and possess intrinsic spin-orbit coupling that results in the opening of a gap in their electronic band structure. Under the influence of external static and circularly polarized electromagnetic fields the four Dirac gaps are in general nondegenerate and the monolayer may be driven through several phase transitions involving topologically non-trivial states [22][23][24][25][26]. Previous studies on SHEL in the graphene family have been restricted to graphene [27][28][29], therefore overlooking the role of finite staggering, spin-orbit coupling, and spin/valley dynamics. The interplay between topological matter and SHEL was considered in magnetic field biased bulk materials with axion coupling [30]. In this letter we take advantage of the crossroads between topology, phase transitions, spin-orbit interactions, and Dirac physics in staggered 2D semiconductors to uncover magnetic field free topological phase transitions in...

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Determination of magneto-optical constant of Fe films with weak measurements

Cited by 98 publications

References 38 publications

Recent advances in the spin Hall effect of light

Recent advances in the spin Hall effect of light

Unveiling the photonic spin Hall effect with asymmetric spin-dependent splitting

Topological Phase Transitions in the Photonic Spin Hall Effect

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