Determination of Molecular Weights of Vapors at High Temperatures. I. The Vapor Pressure of Tin and the Molecular Weight of Tin Vapor<sup>1</sup>

Searcy, Alan W.; Freeman, Robert D.

doi:10.1021/ja01649a084

Cited by 47 publications

(18 citation statements)

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“…Ge and Sn were usually deposited with Knudsen cells in an ultrahigh vacuum (UHV) chamber. The calculated equilibrium vapor pressure of Sn is high, at 1.3 × 10 −10 and 6 × 10 −5 Pa at 500 and 800°C, respectively [27], while the melting point of Sn is very low, at 231.9°C. Hence, a crucible temperature as high as 800°C is often required to obtain a sufficiently high deposition rate.…”

Section: Molecular Beam Epitaxy (Mbe) Growth Of Ge 1−x Sn X Epitaxialmentioning

confidence: 87%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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Section: Molecular Beam Epitaxy (Mbe) Growth Of Ge 1−x Sn X Epitaxialmentioning

confidence: 87%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…A liquid tin anode was specifically used due to its lower vapor pressure when compared to that of silver. [18,19] A molybdenum tube current collector was submerged in the liquid tin, and hydrogen gas was bubbled through the molybdenum tube at 30 cm 3 /min.…”

mentioning

confidence: 99%

Mitigating Electronic Current in Molten Flux for the Magnesium SOM Process

Gratz

Guan

Milshtein

et al. 2014

Metall Mater Trans B

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The solid oxide membrane (SOM) process has been used at 1423 K to 1473 K (1150°C to 1200°C) to produce magnesium metal by the direct electrolysis of magnesium oxide. MgO is dissolved in a molten MgF 2 -CaF 2 ionic flux. An oxygen-ion-conducting membrane, made from yttria-stabilized zirconia (YSZ), separates the cathode and the flux from the anode. During electrolysis, magnesium ions are reduced at the cathode, and Mg (g) is bubbled out of the flux into a separate condenser. The flux has a small solubility for magnesium metal which imparts electronic conductivity to the flux. The electronic conductivity decreases the process current efficiency and also degrades the YSZ membrane. Operating the electrolysis cell at low total pressures is shown to be an effective method of reducing the electronic conductivity of the flux. A two steel electrode method for measuring the electronic transference number in the flux was used to quantify the fraction of electronic current in the flux before and after SOM process operation. Potentiodynamic scans, potentiostatic electrolyses, and AC impedance spectroscopy were also used to characterize the SOM process under different operating conditions.

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“…1^/ and Volmer! !^' has subsequently been used by a large number of workg],g^ ( 15,16,(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34) -jjj^g efforts of several of these workers are noteworthy with regard to the present work. Wessel!26) determined the vapor pressure of iron by employing effusion cells of quartz and alunaina suspended from a tungsten torsion wire in a graphite sheath furnace capable of operating at temperatures up to 1500°C.…”

Section: Experimental Techniquesmentioning

confidence: 92%

“…Upon substituting Equation (26), Equation (21) becomes dF^ = RTd In(aAp^) (27) or dF_4 = RTd lna_A + RTd Inp^ .…”

Section: Thermodynamicsmentioning

confidence: 99%

A Study of the Thermodynamic Properties of the Vanadium-Iron Alloy System

Myles¹

1963

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Determination of Molecular Weights of Vapors at High Temperatures. I. The Vapor Pressure of Tin and the Molecular Weight of Tin Vapor¹

Cited by 47 publications

References 0 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Mitigating Electronic Current in Molten Flux for the Magnesium SOM Process

A Study of the Thermodynamic Properties of the Vanadium-Iron Alloy System

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Determination of Molecular Weights of Vapors at High Temperatures. I. The Vapor Pressure of Tin and the Molecular Weight of Tin Vapor1

Cited by 47 publications

References 0 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Mitigating Electronic Current in Molten Flux for the Magnesium SOM Process

A Study of the Thermodynamic Properties of the Vanadium-Iron Alloy System

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Determination of Molecular Weights of Vapors at High Temperatures. I. The Vapor Pressure of Tin and the Molecular Weight of Tin Vapor¹