Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

Svensson, Stefan P.; Sarney, Wendy L.; Yu, K. M.; Min, Ting; Calley, W. Laws; Новиков, С. В.; Foxon, C.T.; Walukiewicz, W.

doi:10.1016/j.jcrysgro.2015.02.035

Cited by 4 publications

(3 citation statements)

References 16 publications

(23 reference statements)

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“…To quickly determine the fluxes at temperatures required for HMA growth we have employed a new in situ Auger electron probe that allows chemical analysis during deposition [72]. In these experiments we fix the N flux and program a linear Ga-flux ramp, while observing the emitted Auger electrons from nitrogen that are excited by the RHEED electron gun.…”

Section: Lt-mbe Grown Ganmentioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Lt-mbe Grown Ganmentioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…The Staib AugerProbe TM has demonstrated its effectiveness for surface analysis in MBE systems with reported in situ observation of N, O, Si, Fe, Zn, Ga, Tb, and Dy. 32,33,36,37 However, to the best of our knowledge, in situ observation of complex oxides thin films grown by oxide PLD using this probe design has yet to be reported in the literature but other efforts on simple oxides have been reported. 32,36 We have, to date, observed characteristic Auger spectra for more than 24 elements using the probe, shown in Figure 2.…”

Section: A Auger Probe Capabilitiesmentioning

confidence: 99%

In situ Auger electron spectroscopy of complex oxide surfaces grown by pulsed laser deposition

Orvis

Surendran

Liu

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by collecting characteristic Auger spectra of elements from samples such as complex oxide thin films and single crystals as well as metal foils. In the case of thin films, AES studies can be performed with single unit cell precision by monitoring thickness during deposition with reflection high energy electron diffraction (RHEED). The authors address some of the challenges in achieving in situ and real time AES studies on complex oxide thin films grown by PLD. Sustained layerby-layer PLD growth of a CaTiO3/LaMnO3 superlattice allows depth-resolved chemical composition analysis during the growth process. The evolution of the Auger spectra of the elements from individual layers were used to perform chemical analysis with monolayerdepth resolution.

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“…An in-situ Auger electron spectroscopy (AES) probe that can operate during the MBE growth process was used to record spectra sequentially through a growth stop during InAsSb deposition. For further technical details, see [15]. The Auger transitions from As (M 45 VV ∼ 36 eV and LMM ∼ 1230 eV), Sb (MNN ∼ 460 eV) and In (MNN ∼ 400 eV) were used.…”

mentioning

confidence: 99%

Design considerations for a long-wavelength InAsSb detector diode

Svensson,

Beck,

Donetsky

et al. 2024

Semicond. Sci. Technol.

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InAsSb can absorb light across the entire long wavelength range (8-12 μm) and shares many of the other relevant basic materials properties of HgCdTe, the current incumbent detector technology for this band. We discuss here the device architectures in relation to the crystal growth technical aspects using molecular beam epitaxy and propose a simplified design consisting of an InAsSb absorber with a graded wider bandgap top layer of lattice matched AlInAsSb that exhibits a spontaneously formed p-n-junction. The 77 K device performance is predicted with a numerical model that indicates that quantum efficiencies of at least 75% should be achievable. 

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Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

Cited by 4 publications

References 16 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

In situ Auger electron spectroscopy of complex oxide surfaces grown by pulsed laser deposition

Design considerations for a long-wavelength InAsSb detector diode

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Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

Cited by 4 publications

References 16 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

In situ Auger electron spectroscopy of complex oxide surfaces grown by pulsed laser deposition

Design considerations for a long-wavelength InAsSb detector diode

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Product

Resources

About

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties