Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method

Cho, Chul‐Hee; Kim, Sijun; Lee, Youngseok; Seong, Inho; Jeong, Wonnyoung; You, Yebin; Choi, Minsu; You, S. J.

doi:10.3390/ma16072762

Cited by 2 publications

(2 citation statements)

References 36 publications

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“…To sweep the voltage (V) across the Langmuir probe and measure the resulting current (I), we employed a commercial control system (Wise Probe System, P&A Solutions, Seoul, Republic of Korea) and accompanying software (WiseSLP, P&A Solutions, Seoul, Republic of Korea). Since the Langmuir probe method is widely used [22,40], we provide a brief description here. We swept probe voltages ranging from −20 V to 30 V with averaging of 25 iterations.…”

Section: Plasma Diagnosticsmentioning

confidence: 99%

“…Furthermore, since these radicals are produced through dissociative electron impact collisions, it is essential to measure electron parameters to control radical species. Various electron parameter diagnostics applicable in plasma processing have been developed, including microwave probes [20,21], emissive probes [22], and voltage/current probes [23].…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Seong,

Kim,

Choi

et al. 2023

Materials

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The understanding of ion dynamics in plasma applications has received significant attention. In this study, we examined these effects between He and Ar species, focusing on the Ar ion flux on the substrate. To control heterogeneous collisions, we varied the He addition rate at fixed chamber pressure and the chamber pressure at fixed Ar/He ratio in an inductively coupled Ar/He plasma source. Throughout the experiments, we maintained an electron density in the bulk plasma and plasma potential as a constant value by adjusting the RF power and applying an additional DC bias to eliminate any disturbances caused by the plasma. Our findings revealed that the addition of He enhances the Ar ion flux, despite a decrease in the Ar ion density at the plasma–sheath boundary due to the presence of He ions. Moreover, we found that this enhancement becomes more prominent with increasing pressure at a fixed He addition rate. These results suggest that the heterogeneous charge transfer collision between Ar atoms and He ions in the sheath region creates additional Ar ions, ultimately leading to an increased Ar ion flux on the substrate. This finding highlights the potential of utilizing heterogeneous charge transfer collisions to enhance ion flux in plasma processing, without the employment of additional equipment.

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Section: Plasma Diagnosticsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Seong,

Kim,

Choi

et al. 2023

Materials

Self Cite

View full text Add to dashboard Cite

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Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6)

Seong,

You,

Lee

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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Reducing greenhouse gas emissions from semiconductor manufacturing has been attracting enormous interest in both industry and academia as global warming issues have increased in significance year by year. Among various strategies, the search for etch precursors that have low global warming potential is actively underway worldwide to reduce the use of conventional precursors with high global warming potential. In this paper, we explore the use of C6F6, a promising candidate to replace the widely utilized perfluorocarbon precursor C4F8, for plasma atomic layer etching (ALE) of SiO2. In situ ellipsometry results indicated that acceptable ALE characteristics were obtained with C4F8 and C6F6 each in their own specific ALE window, while C6F6 showed superior ALE performance. Investigation into the ALE performance with different precursors was then conducted based on plasma diagnostics for radical density, electron density, and plasma potential, and the results of which showed that the difference in the radical composition between precursors significantly affected the resulting ALE trends and also that the excellent ALE performance with C6F6 might originate from its significant polymeric characteristics. We expect the present findings to contribute to the wider adoption of low global warming potential precursors in the etching process.

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Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method

Cited by 2 publications

References 36 publications

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6)

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